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TP869C08R
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Repetitive peak reverse voltage
Average output current
Non-repetitive forward surge current**
Operating junction temperature
Storage temperature
Note* Out put current of center tap full wave connection.
Note** Rating per element
FUJI Diode
Symbols
V
RRM
Io
I
FSM
Tj
Tstg
Conditions
-
50Hz square wave duty =1/2
Tc =98˚C
Sine wave, 10ms 1shot
-
-
Ratings
80
40*
190
150
-40 to +150
Units
V
A
A
˚C
˚C
Electrical characteristics
Item
Forward voltage***
Reverse current***
Thermal resistance
Note*** Rating per element
(at Ta=25˚C unless otherwise specified.)
Symbols
V
F
I
R
Rth(j-c)
I
F
= 20 A
V
R
=V
RRM
Junction to case
Conditions
Maximum
0.71
200
1.00
Units
V
µA
˚C/W
Mechanical characteristics
Item
Approximate mass
Conditions
-
Maximum
1.6
Units
g
1
TP869C08R
Outline Drawings [mm]
http://www.fujisemi.com
FUJI Diode
2
TP869C08R
http://www.fujisemi.com
FUJI Diode
Forward Characteristic (typ.)
10
6
Reverse Characteristic (typ.)
10
10
5
Tj=150°C
Tj=125°C
10
4
Tj=150°C
Tj=125°C
IF Forward Current (A)
Tj=100°C
IR Reverse Current (uA)
Tj=100°C
Tj=25°C
1
10
3
10
2
Tj= 25°C
10
0.1
1
10
0
10
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
-1
0
10
20
30
40
50
60
70
80
90
VR Reverse Voltage (V)
VF Forward Voltage (V)
Forward Power Dissipation (max.)
26
6
Reverse Power Dissipation (max.)
DC
24
360°
360°
22
I
0
λ
5
VR
α
20
(W)
(W)
Square wave
λ
=60°
Square wave
λ
=120°
Sine wave
λ
=180°
Square wave
λ
=180°
18
4
14
PR Reverse Power Dissipation
WF Forward Power Dissipation
16
3
12
α
=180°C
DC
10
2
8
6
1
4
2
Per 1 element
0
0
2
4
6
8
10
12
14
16
18
20
22
0
0
20
40
60
80
100
Io Average Output Current
(A)
VR Reverse Voltage
(V)
3
TP869C08R
http://www.fujisemi.com
FUJI Diode
Current Derating (Io-Tc) (max.)
160
Junction Capacitance Characteristic (max.)
150
140
1000
130
120
DC
110
Sine wave
λ
=180°
100
Square wave
λ
=180°
Tc Case Temperature
90
Square wave
λ
=120°
Cj Junction Capacitance (pF)
(°C)
100
80
Square wave
λ
=60°
70
360°
60
I
0
50
λ
VR=40V
40
0
5
10
15
20
25
30
35
40
45
50
55
10
1
10
100
1000
Io Average Output Current
(A)
λ
:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
VR Reverse Voltage (V)
Surge Capability (max.)
1000
IFSM Peak Half - Wave Current
(A)
100
10
1
10
100
Number of Cycles at 50Hz
4
TP869C08R
Surge Current Ratings (max.)
http://www.fujisemi.com
FUJI Diode
1000
IFSM Peak HAlf-Wave Current (A)
100
1
10
t Time (ms) Sinewave
100
1000
Transient Thermal Impedance (max.)
10
1
(°C/W)
Rth(j-c):1.0°C/W
10
0
Transient Thermal Impedance
10
-1
10
-2
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
Time
(sec)
5
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