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RD2006RH-SB

Description
Ultrahigh-Speed Switching Diode
CategoryDiscrete semiconductor    diode   
File Size246KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

RD2006RH-SB Overview

Ultrahigh-Speed Switching Diode

RD2006RH-SB Parametric

Parameter NameAttribute value
MakerSANYO
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.75 V
Maximum non-repetitive peak forward current220 A
Number of components1
Maximum operating temperature150 °C
Maximum output current20 A
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.05 µs
surface mountNO
Ordering number : EN9054
RD2006RH-SB
SANYO Semiconductors
DATA SHEET
RD2006RH-SB
Features
Diffused Junction Silicon Diode
Ultrahigh-Speed Switching Diode
VRRM=600V
VF=1.75V max. (IF=20A)
trr=21ns (typ.)
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Average Output Current
R.M.S Forward Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
DC bias
50Hz resistive load, Sine wave Tc=63°C
Tc=25°C (SANYO’s ideal heat dissipation condition) *, Package limited, DC
50Hz Sine wave, 1 pulse
Conditions
Ratings
600
20
30
220
150
-
-55 to +150
Unit
V
A
A
A
°C
°C
I
O
I
F(RMS)
I
FSM
Tj
Tstg
*.
SANYO’s condition is radiation from backside
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium
Package Dimensions
unit : mm (typ)
7534-001
16.0
3.4
5.6
3.1
8.0
Product & Package Information
• Package
: TO-3PMLH
• JEITA, JEDEC
: SC-93, TO-247, SOT-199
• Minimum Packing Quantity : 100 pcs./tray
5.0
Marking
Electrical Connection
2
21.0
4.0
1.0
22.0
0.8
2.8
2.0
20.4
0.7
0.9
RD2006
LOT No.
2.1
1
5.45
1
2
3
5.45
3.5
1 : Cathode
3 : Anode
SANYO : TO-3PMLH-SB
5.45
5.45
http://semicon.sanyo.com/en/network
60811SA TKIM TC-00002614 No.9054-1/3
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