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GI910

Description
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size68KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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GI910 Overview

3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD

GI910 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
Number of components1
Maximum operating temperature150 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.75 µs
surface mountNO
Base Number Matches1

GI910 Related Products

GI910 GI911 GI912 GI914 GI916 GI917
Description 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD
Is it Rohs certified? incompatible incompatible incompatible - incompatible incompatible
Reach Compliance Code unknown unknow unknow - unknow unknow
Configuration SINGLE SINGLE SINGLE - SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.25 V 1.25 V 1.25 V - 1.25 V 1.25 V
Number of components 1 1 1 - 1 1
Maximum operating temperature 150 °C 150 °C 150 °C - 150 °C 150 °C
Maximum output current 3 A 3 A 3 A - 3 A 3 A
Maximum repetitive peak reverse voltage 50 V 100 V 200 V - 600 V 800 V
Maximum reverse recovery time 0.75 µs 0.75 µs 0.75 µs - 0.75 µs 0.75 µs
surface mount NO NO NO - NO NO

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