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GI816HE3-73

Description
1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AC
Categorysemiconductor    Discrete semiconductor   
File Size72KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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GI816HE3-73 Overview

1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AC

GI810 thru GI818
Vishay General Semiconductor
Glass Passivated Junction Fast Switching Rectifier
FEATURES
• Superectifier structure for high reliability condition
SUPERECTIFIER
®
• Cavity-free glass-passivated junction
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
DO-204AC (DO-15)
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For general purpose of medium frequency rectification.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
I
R
V
F
T
J
max.
1.0 A
50 V to 1000 V
30 A
750 ns
10 μA
1.2 V
175 °C
MECHANICAL DATA
Case:
DO-204AC, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 0.375"
(9.5 mm) lead length at T
A
= 75 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
GI810
50
35
50
GI811
100
70
100
GI812
200
140
200
GI814
400
280
400
1.0
30
- 65 to + 175
GI816
600
420
600
GI817
800
560
800
GI818
1000
700
1000
UNIT
V
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage
Maximum DC reverse current at
rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Document Number: 88628
Revision: 15-Mar-11
TEST CONDITIONS
1.0 A
T
A
= 25 °C
T
A
= 100 °C
I
F
= 1.0 A, V
R
= 30 V,
dI/dt = 50 A/μs
4.0 V, 1 MHz
SYMBOL
V
F
I
R
t
rr
C
J
GI810
GI811
GI812
GI814
1.2
10
μA
100
750
25
ns
pF
GI816
GI817
GI818
UNIT
V
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

GI816HE3-73 Related Products

GI816HE3-73 GI810 GI811 GI812 GI814 GI816 GI816-E3-73 GI817 GI818
Description 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AC 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AC 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AC 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AC 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC
Is it Rohs certified? - incompatible incompatible incompatible incompatible incompatible - incompatible incompatible
Maker - Vishay Vishay Vishay Vishay Vishay - Vishay Vishay
Reach Compliance Code - unknown unknown unknow unknow unknow - unknown unknow
ECCN code - EAR99 EAR99 EAR99 EAR99 EAR99 - EAR99 EAR99
Configuration - SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE SINGLE
Diode type - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) - 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V - 1.2 V 1.2 V
Number of components - 1 1 1 1 1 - 1 1
Maximum operating temperature - 175 °C 175 °C 175 °C 175 °C 175 °C - 175 °C 175 °C
Maximum output current - 1 A 1 A 1 A 1 A 1 A - 1 A 1 A
Maximum repetitive peak reverse voltage - 50 V 100 V 200 V 400 V 600 V - 800 V 1000 V
Maximum reverse recovery time - 0.75 µs 0.75 µs 0.75 µs 0.75 µs 0.75 µs - 0.75 µs 0.75 µs
surface mount - NO NO NO NO NO - NO NO
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