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MBR2080CTTRRPBF

Description
10 A, 100 V, SILICON, RECTIFIER DIODE, TO-262AA
Categorysemiconductor    Discrete semiconductor   
File Size178KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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MBR2080CTTRRPBF Overview

10 A, 100 V, SILICON, RECTIFIER DIODE, TO-262AA

VS-MBRB20...CTPbF, VS-MBR20...CT-1PbF Series
Vishay High Power Products
Schottky Rectifier, 2 x 10 A
VS-MBRB20...CTPbF
VS-MBR20 ...CT-1PbF
FEATURES
150 °C T
J
operation
Low forward voltage drop
High frequency operation
Center tap D
2
PAK and TO-262 packages
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Halogen-free according to IEC 61249-2-21 definition
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
Base
common
cathode
2
Base
common
cathode
2
2
1 Common
3
cathode Anode
Anode
2
1 Common
3
Anode cathode Anode
D
2
PAK
TO-262
DESCRIPTION
This center tap Schottky rectifier has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 10 A
80 V to 100 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
FRM
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
10 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform (per device)
T
C
= 133 °C (per leg)
VALUES
20
20
80 to 100
850
0.70
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRB2080CTPbF VS-MBRB2090CTPbF VS-MBRB20100CTPbF
VS-MBR2080CT-1PbF VS-MBR2090CT-1PbF VS-MBR20100CT-1PbF
80
90
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per leg
per device
SYMBOL
I
F(AV)
I
FRM
TEST CONDITIONS
T
C
= 133 °C, rated V
R
Rated V
R
, square wave, 20 kHz, T
C
= 133 °C
5 μs sine or
3 μs rect. pulse
Following any rated load ondition
and with rated V
RRM
applied
VALUES
10
20
20
850
150
0.5
24
mJ
A
UNITS
Peak repetitive forward current per leg
Non-repetitive peak surge current
I
FSM
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
2.0 μs, 1.0 kHz
T
J
= 25 °C, I
AS
= 2 A, L = 12 mH
Peak repetitive reverse surge current
Non-repetitive avalanche energy per leg
I
RRM
E
AS
Document Number: 94306
Revision: 16-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
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