12.9 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET
| Parameter Name | Attribute value |
| Minimum breakdown voltage | 30 V |
| Number of terminals | 5 |
| Processing package description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, POWERPAK, SOP-8 |
| EU RoHS regulations | Yes |
| China RoHS regulations | Yes |
| state | Active |
| Rated avalanche energy | 11.25 mJ |
| Shell connection | DRAIN |
| structure | SINGLE WITH BUILT-IN DIODE |
| drain_current_max__abs___id_ | 35.6 A |
| Maximum leakage current | 12.9 A |
| Maximum drain on-resistance | 0.0130 ohm |
| field effect transistor technology | METAL-OXIDE SEMICONDUCTOR |
| jesd_30_code | R-PDSO-C5 |
| jesd_609_code | e3 |
| moisture_sensitivity_level | 1 |
| Number of components | 1 |
| operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 Cel |
| Packaging Materials | PLASTIC/EPOXY |
| packaging shape | RECTANGULAR |
| Package Size | SMALL OUTLINE |
| eak_reflow_temperature__cel_ | 260 |
| larity_channel_type | N-CHANNEL |
| wer_dissipation_max__abs_ | 29.8 W |
| Maximum leakage current pulse | 50 A |
| qualification_status | COMMERCIAL |
| sub_category | FET General Purpose Power |
| surface mount | YES |
| terminal coating | MATTE TIN |
| Terminal form | C BEND |
| Terminal location | DUAL |
| ime_peak_reflow_temperature_max__s_ | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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