SiDB766707
Vishay Siliconix
SiC714CD10 MOSFET Plus Driver Evaluation Board
FEATURES
• MOSFET Plus Driver PowerPAK
®
MLF 10 x 10 Product
Demonstration
• 10 V to 14 V Input Voltage
• Switching Frequency: 100 kHz to > 1 MHz
• Up to 27 A Output Current
ORDERING INFORMATION
EVB Order Number
SiDB766707-B
SiDB766707-C
SiDB766707-D
V
IN
12 V
12 V
12 V
V
OUT
3.3 V
2.5V
1.3 V
DESCRIPTION
The SiDB766707 evaluation board provides a refer-
ence design for evaluating the performance of the
SiC714CD10. The module contains all of the circuitry
necessary to control a synchronous buck converter in
voltage mode configuration. This document explains
how to construct basic power conversion circuits using
the SiC714CD10 and includes test results.
The evaluation board includes a voltage mode control-
ler (TL5001), power up/down sequence circuitry, and a
linear regulator (7805) which generates a 5 V output
from a 12 V input for control voltage supply. The board
is fully assembled and tested and ready for immediate
use.
Included in this document are the Bill-Of-Material,
Schematics, PCB Layout, and test results.
OPERATING SPECIFICATIONS
Table 1 summarizes the performance specifications of
the SiDB766707.
TABLE 1
Operating Specifications (as shipped)
Specification
Input Voltage Range (V
IN
)
Output Voltage (V
OUT
)
SiDB766707-B
SiDB766707-C
SiDB766707-D
Output Current (I
OUT
)
(12 V
IN
/2.5 V
OUT
, F
SW
= 300 kHz)
Efficiency
(12 V
IN
/2. 5 V
OUT
, I
OUT
= 7 A)
Operating Frequency
Min
10
Typ
12
3.3
2.5
1.3
27
94.5
300
Max
14
Units
V
V
V
V
A
%
kHZ
The evaluation board layout is available in Gerber file format. Please
contact your Vishay sales representative or distributor for a copy.
TEST SET UP
Figure 1 shows the input-output connections to the
SiDB766707.
Note: Before making any EVB set up changes it is
strongly advised to power down and disconnect power
supplies.
Figure 1. Test Set Up
Document Number: 73282
17-Mar-06
www.vishay.com
1
SiDB766707
Vishay Siliconix
SWITCHING FREQUENCY ADJUSTMENT
The switching frequency can be selected by changing
the resistance of R15. Table 2 shows typical switching
frequency relative to the R15 value. The SiDB766707
EVB comes preset with an R15 of 22.6 kΩ for 300 kHz
operation.
TABLE 2
Frequency vs. R15
Frequency
300 kHz
400 kHz
R15
22.6 kΩ
15 kΩ
JP2
JUMPER PIN DESCRIPTION
TABLE 4
Description
Selection of LDO (7805) input voltage:
JP1
(1) short; LDO input voltage = V
IN
(2) open; The LDO input voltage must be
supplied from DCIN (J1) externally.
SYNC Selection:
(1) short to V
DD
= normal PWM
(2) short to GND = SYNC enabled, i.e. the
low-side MOSFET is disabled and is held
in the of state
Selection of a shunt resistor (R12)
Short to
V
DD
Short
Default
OUTPUT VOLTAGE PROGRAMMING
The output voltage can be programmed by selecting
four components as shown in Table 3.
TABLE 3
V
OUT
3.3 V
2.5 V
1.3 V
R17
7.68 kΩ
4.99 kΩ
1 kΩ
R5
10 kΩ
7.68 kΩ
3.4 kΩ
C6
5.6 nF
6.8 nF
15 nF
C7
220 pF
220 pF
1800 pF
JP3
JP4
Short
ELECTRICAL PERFORMANCE
The SiDB766707 evaluation board provides optimum
efficiency. Typical performance is shown in Figure 2 to
Figure 4. Note that the efficiency was obtained after
U1, U2 and U3 (see schematic) were disabled. For the
94
92
300 kHz
90
efficiency measurements, an external function genera-
tor was used to generate PWM signals for open-loop
operation.
9
8
7
Total Loss (
W
)
6
5
500 kHz
4
3
2
500 kHz
1
0
0
10
20
30
0
5
10
15
20
25
30
Output Current – (A)
Output Current – (A)
300 kHz
700 kHz
Efficiency (
%
)
88
86
84
82
80
78
76
700 kHz
Figure 2. Total Efficiency 12 V
IN
/1.3 V
OUT
Figure 3. Total Loss 12 V
IN
/2.5 V
OUT
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Document Number: 73282
17-Mar-06
SiDB766707
Vishay Siliconix
ELECTRICAL PERFORMANCE
Figure 4. Measured Switch Voltage V
SW
(V
IN
= 12 V, V
OUT
= 2.5 V, I
OUT
= 20 A)
Document Number: 73282
17-Mar-06
www.vishay.com
3
SiDB766707
Vishay Siliconix
LAYOUT
Figure 5. Top Silk Screen
Figure 6. Top Layer
Figure 7. Internal Power Layer; 2nd Layer
Figure 8. Internal Power Layer; 3rd Layer
Figure 9. Bottom Silk Screen
Figure 10. Bottom Layer
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Document Number: 73282
17-Mar-06
SiDB766707
Vishay Siliconix
TABLE 5
Bill-of-Materials of Sic714CD10 MOSFET plus driver EVB - SiDB766707
Designator
M2
R1
R2, R6, R7, R8, R9
R3, R4
R5
R10
R11
R13
R14, R15
R16
R17
Qty
1
1
5
2
1
1
1
1
1
1
2
1
1
1
1
1
1
1
2
5
1
1
1
1
1
1
1
1
1
3
4
1
1
1
0
1
1
1
1
1
1
1
L1
1
1
Part Number
SiC714CD10
CRCW0603000ZRT1
CRCW0603103JRT1
CRCW0603202JRT1
CRCW0603103JRT1
CRCW06037681FRT1
CRCW06033401FRT1
CRCW0603100JRT1
CRCW0603473JRT1
CRCW0603754JRT1
CRCW06022632FRT1
CRCW06033321FRT1
CRCW06037681FRT1
CRCW06034991FRT1
CRCW06031001FRT1
CRCW06037681FRT1
CRCW06037681FRT1
CRCW06031240FRT1
18123D106KAT2A
VJ0805Y104KXAC W1BC
VJ0805G225KXQC W1BC
VJ0603Y562KXAAC
VJ0603Y682KXAAC
VJ0603Y153KXAAC
VJ0603Y221KXAAC
VJ0603Y221KXAAC
VJ0603Y182KXAAC
VJ0603Y472KXAAC
VJ0603Y222KXAAC
594D227X0010D
VJ1206G106KXYC W1BC
VJ0603Y222KXAAC
VJ0603Y222KXAAC
VJ0603Y393KXAAC
NOT POPULATED
TP0610T
2N7002E
Si1032X
DG2012DL
TL5001
MC78L05 AC S
IHLP-5050FD-ER3R3 or
SSC-12808-3R1
IHLP-5050FD-ER2R2 or
SSC-12808-2R2
IHLP-5050FD-ER1R5 or
SSC-12808-1R5
Description
MLF 10 x 10, VDS 20 V
RES, 0
Ω
5 % 1/16 W 0603
RES, 10 kΩ 5 % 1/16 W 0603
RES, 2 kΩ 5 % 1/16 W 0603
SiDB766707-B - RES, 10 kΩ 5 % 1/16 W 0603
SiDB766707-C -RES, 7.68 kΩ 1 % 1/16 W 0603
SiDB766707-D - RES, 3.4 kΩ, 1 % 1/16 W
RES, 10
Ω
5 % 1/16 W 0603
RES, 47 kΩ 5 % 1/16 W 0603
RES, 750 kΩ 5 % 1/16 W 0603
RES, 22.6 kΩ 1 % 1/16 W 0603
RES, 3.32 kΩ 1 % 1/16 W 0603
SiDB766707-B - RES, 7.68 kΩ 1 % 1/16 W
SiDB766707-C -RES, 4.99 kΩ 1 % 1/16 W
SiDB766707-D - RES, 1 kΩ 1 % 1/16 W
SiDB766707-B - RES, 7.68 kΩ 1 % 1/16 W 0603
SiDB766707-C -RES, 7.68 kΩ 1 % 1/16 W 0603
SiDB766707-D - RES, 124
Ω
, 1 % 1/16 W
Ceramic CAP, 10 µF_1812_25 V, X5R
Ceramic CAP, 0.1 µF 50 V X7R 0805
Ceramic CAP, 2.2 µF 10 V X5R 0805
SiDB766707-B - CAP, 5.6 nF 50 V X7R 0603
SiDB766707-C -CAP, 6.8 nF 50 V X7R 0603
SiDB766707-D - CAP, 0.015 µF 50 V X7R
SiDB766707-B - CAP, 220 pF 50 V X7R 0603
SiDB766707-C -CAP, 220 pF 50 V X7R 0603
SiDB766707-D - CAP, 1800 pF 50 V X7R
Ceramic CAP, 4700 pF 50 V X7R 0603
Ceramic CAP, 2200 pF 50 V X7R 0603
CAP 220 µF
Ceramic CAP, 10 µF 6.3 V X5R 1206
SiDB766707-B - CAP, 2200 pF 50 V X7R
SiDB766707-C - CAP, 2200 pF 50 V X7R
SiDB766707-D - CAP, 0.039 µF 50 V X7R
CAP 220 µF
P MOSFET TP0610T
N MOSFET 2N7002E
N MOSFET Si1032X
Analog Switch
PWM Controller
Linear Regulator
SiDB766707 Ver 2 0 B Inductor 3 3 µH
SiDB766707 Ver 2 0 C Inductor 2 2 µH
SiDB766707 Ver 2 0 D Inductor 1 5 µH
Size
MLF10 x 10
603
603
603
603
603
603
603
603
603
603
603
603
603
603
603
603
603
1812
805
805
603
603
603
603
603
603
603
603
D
1206
603
603
603
C
SOT-23
SOT-23
SC89-3
SC70-10
SO-8
SO-8
13 x 13 mm
12.8 x 14.2 mm
13 x 13 mm
12.8 x 14.2 mm
13 x 13 mm
12.8 x 14.2 mm
Manufacturer
Vishay
Vishay
R18
C1, C3
C2, C5, C8, C17, C19
C4
C6
C7
C9
C10
C11, C12, C14
C13, C22, C23, C24
C16
C25, C26
Q1
Q2
Q3
U1
U2
U3
Vishay
OSCON
Vishay
Vishay
Texas Instruments
Motorola
Vishay
Vishay
Vishay
Document Number: 73282
17-Mar-06
www.vishay.com
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