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S72WS256ND0BAWBB3

Description
Memory Circuit, Flash+SDRAM, CMOS, PBGA137
Categorystorage    storage   
File Size5MB,242 Pages
ManufacturerAMD
Websitehttp://www.amd.com
Environmental Compliance
Download Datasheet Parametric View All

S72WS256ND0BAWBB3 Overview

Memory Circuit, Flash+SDRAM, CMOS, PBGA137

S72WS256ND0BAWBB3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionFBGA, BGA137,10X14,32
Reach Compliance Codecompliant
Maximum access time70 ns
JESD-30 codeR-PBGA-B137
Memory IC TypeMEMORY CIRCUIT
Mixed memory typesFLASH+SDRAM
Number of terminals137
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA137,10X14,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
power supply1.8 V
Certification statusNot Qualified
Maximum standby current0.00004 A
Maximum slew rate0.06 mA
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Base Number Matches1
S72WS256N Based MCPs
256/512 Megabit (16M/32M x 16-bit) CMOS 1.8 Volt-only,
Simultaneous Read/Write, Burst Mode Flash Memory with
256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM
on Split Bus
Data Sheet
ADVANCE
INFORMATION
Notice to Readers:
This document states the current technical specifications
regarding the Spansion product(s) described herein. Each product described
herein may be designated as Advance Information, Preliminary, or Full
Production. See
“Notice On Data Sheet Designations”
for definitions.
Publication Number
S72WS256N_00
Revision
A
Amendment
1
Issue Date
June 1, 2005
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