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LN260RPX_08

Description
Light Emitting Diodes
File Size264KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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LN260RPX_08 Overview

Light Emitting Diodes

This product complies with the RoHS Directive (EU 2002/95/EC).
Light Emitting Diodes
LN260RPX
Square Type
3.0 mm
×
2.0 mm
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Power dissipation
Forward current
Pulse forward current
*
Reverse voltage
Operating ambient temperature
Storage temperature
Symbol
P
D
I
F
I
FP
V
R
T
opr
T
stg
Rating
70
25
150
4
–25 to +85
–30 to +100
Unit
mW
mA
mA
V
°C
°C
Lighting Color
Red
Note) *: The condition of I
FP
is duty 10%, Pulse width 1 msec.
Electro-Optical Characteristics
T
a
= 25°C
Parameter
Luminous intensity
Reverse current
Forward voltage
Peak emission wavelength
Spectral half band width
I
O
I
F
Symbol
I
O
I
R
V
F
λ
P
Δλ
V
R
= 4 V
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
V
F
2.2
700
100
Relative luminous intensity
T
a
Conditions
Min
0.3
Typ
0.7
5
2.8
Max
Unit
mcd
µA
V
nm
nm
10
100
1000
3
Forward current I
F
(mA)
5
50
30
Relative luminous intensity (%)
1.6
1.8
2.0
2.2
2.4
Luminous intensity I
O
(mcd)
500
300
1
0.5
0.3
10
5
3
100
50
30
0.1
1
3
5
10
30
50
100
1
10
−20
0
20
40
60
80
100
Forward current I
F
(mA)
Forward voltage V
F
(V)
Ambient temperature T
a
(°C)
Relative luminous intensity (%)
Relative luminous intensity
 λ
P
100
80
60
40
20
0
500
600
700
800
80°
90°
100
80
60
40
20
40°
50°
60°
70°
I
F
T
a
50
Directive characteristics
30°
20° 10°
80°
60°
40°
20°
0
20
40
60
80
10° 20°
30°
40°
50°
60°
70°
Forward current I
F
(mA)
40
30
20
10
0
80°
90°
100
0
20
40
60
80
100
Peak emission wavelength
λ
P
(nm)
Relative luminous intensity (%)
Ambient temperature T
a
(°C)
Publication date: November 2008
SHD00493BEK
1

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