epc3xx
High sensitive photodiodes
General Description
Features
The epc3xx family products are high-sensitive photo diodes for
Low dark current
light-barrier, light-curtain, and the like applications. These photo
High quantum efficiency
diodes are designed to be used in a reverse-bias mode.
High dynamic range
Diodes can be used in parallel
This device allows the design of short to long range light barriers
CSP package with very small footprint
from a few millimeters up to tens of meters.
Near infrared and visible version available
Customer specific wavelength filter upon request
Using chips from the epc3xx product line, linear or two dimen-
sional arrays can be formed for any application, be it triangulation,
spot location, angle measurement, rotary encoders, or similar.
Applications
Also, spectral sensitive detectors can easily be designed by
applying color filters in front of the photo diodes.
Light barriers ranging from millimeters to tens of meters
Light curtains
Also, other mechanical dimensions are available upon request. It
Smoke detectors
is be possible to manufacture photo diodes of up to 15x15 mm or
Liquid detectors
even bigger. Such a 15x15 mm device then would contain 450
Heart beat monitors
individual photo diodes, each of them individually accessible. All
Position detection (rotary, linear, angle, etc.)
diodes feature a very high quantum efficiency of 90% in the near
IR remote control of Hi-Fi, TV sets and other equipment
IR range, a reverse breakdown voltage of up to 30 Volts and a
Leveling instruments
response time down to less than 100ns. All devices are available
Differential measurement
upon request with optical bandpass filters.
Linear photo diode arrays
Product Range Overview
connection
R
connection
connection
R
connection
R
connection
R
connection
connection
connection
R
connection
R
connection
connection
connection
R
connection
R
connection
R
connection
R : refer to chapter “Electrical isolation between individual diodes”
Model
Single diode
epc300
epc310
epc320
epc330
No. of
Photo
Diodes
1
2
4
8
16
Diode
Length
(mm)
1.0
1.0
2.0
2.0
4.0
Diode
Width
(mm)
0.5
1.0
1.0
2.0
2.0
Total Active
Area
(mm
2
)
0.43
0.86
1.71
3.42
6.84
Typ. Dark
Current
at 20°C (pA )
20
40
80
160
320
Ideal Bias
Voltage
(V)
5
5
5
5
5
Wavelength
(nm)
400 - 1050
400 - 1050
400 - 1050
400 - 1050
400 - 1050
Footprint
---
CSP4
CSP8
CSP16
CSP32
Type specific characteristics (all diodes of the array connected in parallel)
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
1
Datasheet epc3xx - V2.3
www.espros.ch
epc3xx
Absolute Maximum Ratings
(Notes 1, 2)
Reverse Voltage V
R
Breakdown Voltage between Diodes
Storage Temperature Range (T
S
)
Lead Temperature solder, 4 sec. (T
L
)
30.0 V
10.0 V
-40°C to +85°C
+260°C
Reverse Voltage (V
R
)
Operating Temperature (T
A
)
Relative Humidity (non-condensing)
Recommended Operating Conditions
Min.
1.5
-40
+5
Max.
20.0
+85
+95
Units
V
°C
%
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended operating conditions
indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specific-
ations and test conditions, see Electrical Characteristics.
Note 2:
This device is a highly sensitive CMOS photodiodes with an ESD rating of JEDEC HBM class 2 (<2kV). Handling and assembly of
this device should only be done at ESD protected workstations.
Note 3:
Unless otherwise stated, measuring parameters are V
R
= 5.0 V, -40°C < T
A
< +85°C, R
L
= 50 Ω
Note 4:
Unless otherwise stated, measurement data apply for individual photo diodes in multi diode chips
General Characteristics
(Notes 3, 4)
Symbol
λ
S max.
λ
S
λ
η
φ
V
O
TC
V
TC
O
Wavelength
Wavelength Range
Spectral Sensitivity
Quantum Efficiency
Half angle
Open Circuit Voltage
Temperature Coefficient of I
SC
Temperature Coefficient of V
O
I
e
= 0.5 mW/cm
2
Parameter
Conditions/Comments
Min.
max. Sensitivity
S = 20 % of S
max
λ = 850nm, V
R
= 5V, I
e
= 1 mW/cm , type epc300
2
Values
Typ.
850
400
0.6
90
±60
300
0.38
-3.0
1030
Max.
Units
nm
nm
A/W
%
°
mV
%/K
mV/K
λ = 850nm, V
R
= 5V, I
e
= 1 mW/cm
2
, type epc300
Type Specific Characteristics
@ +25°C (all diodes of the array connected in parallel )
Symbol
I
P
Parameter
Photo Current
per diode
epc300
epc310
epc320
epc330
I
R
Dark Current
*
per diode
epc300
epc310
epc320
epc330
I
SC
Short-circuit Current
per diode
epc300
epc310
epc320
epc330
I
e
= 1 mW/cm
2
V
R
= 5 V, T
A
= 20°C
Conditions/Comments
Min.
V
R
= 5V, I
e
= 1 mW/cm ,
λ = 850 nm (NIR filter centered on 850nm)
2
Values
Typ.
2.5
5
10
20
40
20
40
80
160
320
2.5
5
10
20
40
250
500
1000
2000
4000
Max.
Units
μA
pA
μA
*
selected types available upon request
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
2
Datasheet epc3xx - V2.3
www.espros.ch
epc3xx
Symbol
Parameter
Conditions/Comments
Min.
t
r
Rise/Fall Time
all types
photo current measured at
R
L
= 50 Ω , λ = 850 nm, I
P
= 200 μA
V
R
= +1.5 V
V
R
= +5.0 V
V
R
= +10.0 V
C
O
Capacitance
per diode
epc300
epc310
epc320
epc330
NEP
Noise Equivalent Power
per diode
epc300
epc310
epc320
epc330
C
T
Cross Talk Suppression
epc320
epc330
between individual photo diodes on the same chip,
if the voltage difference V
diff
is <100mV between
individual diodes (cathodes)
V
R
= 5 V
V
R
= +5V, ƒ = 100kHz, E = 0
300
150
90
5
10
20
40
80
4.2x10
-15
6.0x10
-15
8.4x10
-15
1.2x10
-14
1.7x10
-14
50
dB
W/√Hz
pF
Values
Typ.
Max.
ns
Units
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
3
Datasheet epc3xx - V2.3
www.espros.ch
epc3xx
Connection Diagrams
epc300
Anode 1
Anode 2
epc310
Anode 1
Anode 2
7
R
Top View
1
Cathode 1
2
Cathode 2
3
Cathode 3
4
Cathode 4
Anode 3
6
Anode 4
5
4
Top View
3
1
Cathode 1
2
Cathode 2
The structure of the diodes
shown in the figure to the left is
the same for all individual
diodes on the chip also for the
models epc310, epc320, and
epc330. Always two photo
diodes are paired and have
shorted anodes as shown in the
figure.
R: refer to chapter “Electrical
isolation between individual
diodes”
epc320
8
Anode 5
16
Anode 6
15
R
Anode 7
14
Anode 8
13
Cathode 5
9
R
Cathode 6
10
Cathode 7
11
Cathode 8
12
R
Top View
8
Anode 1
7
Anode 2
R
6
Anode 3
5
Anode 4
1
Cathode 1
2
Cathode 2
3
Cathode 3
4
Cathode 4
epc330
Anode 9
32
Anode 10
31
R
Cathode 9
17
R
R
16
Anode 1
15
Anode 2
14
Anode 3
13
Anode 4
Cathode 10
18
Cathode 11
19
R
Top View
R
12
Anode 5
11
Anode 6
R
10
Anode 7
9
Anode 8
Cathode 12
20
Anode 11
30
Anode 12
29
R
Cathode 13
21
R
Cathode 14
22
Anode 13
28
Anode 14
27
R
Cathode 15
23
R
Cathode 16
24
Anode 15
26
Anode 16
25
1
Cathode 1
2
Cathode 2
3
Cathode 3
4
Cathode 4
5
Cathode 5
6
Cathode 6
7
Cathode 7
8
Cathode 8
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
4
Datasheet epc3xx - V2.3
www.espros.ch
epc3xx
Other Parameters
(typical values, T
amb
= 25°C, V
DD
= 5.0V, I
PD
=0mA)
1
0.9
0.8
0.7
0.5
0.4
0.3
0.2
0.1
0
0
20
epc3x0
1E+2
1E+1
1E+0
epc300
Relative Sensitivity
IP (µA)
0.6
1E-1
1E-2
1E-3
1E-4
40
60
Angle (°)
80
100
Ie (mW/cm2)
Photocurrent I
P
= ƒ(I
e
), V
R
= 5 V, λ=850nm
Relative sensitivity vs. illumination angle
10%-90% rise / fall time [ns]
1
0.9
epc300/310/320/330
500
450
400
350
300
250
200
150
100
50
0
0
1
2
3
epc30x
Relative Sensitivity
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
400
500
600
700
800
900
1000
___ fall time
..... rise time
4
5
6
7
8
9
Wavelength (nm)
Relative spectral sensitivity
Reverse bias voltage [V]
Rise/ fall time versus reverse bias voltage
Photodiode 1
10.00
0.00
-10.00
-20.00
Cross-talk [dB]
Photodiode 2
-30.00
-40.00
-50.00
-60.00
-70.00
-100 0
100 200 300 400 500 600 700 800 900 10001100
Position [μm]
Cross-talk between a pair of photodiodes
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
5
Datasheet epc3xx - V2.3
www.espros.ch
1E+1
10
1E-4
1E-3
1E-2
1E-1
1E+0
京公网安备 11010802033920号
EEWORLD
