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S25VB40

Description
High Current 25A Single Phase Glass Passivated Bridge Rectifiers High Current 25A Single Phase Glass Passivated Bridge Rectifiers
CategoryDiscrete semiconductor    diode   
File Size83KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
Download Datasheet Parametric View All

S25VB40 Overview

High Current 25A Single Phase Glass Passivated Bridge Rectifiers High Current 25A Single Phase Glass Passivated Bridge Rectifiers

桥式整流二极管

Features

Product Name: High Current 25A Single Phase Glass Passivated Bridge Rectifiers


Product model: S25VB40


product features:


High current capacity with small package


Superior thermal conductivity


Glass passivated chip


High I FSM


We declare that the material of product compliance with RoHS requirements.


Plastic Package has Underwriters Laboratory Flammability Classification 94V-0



Applications:


Used for inverter welding machine


Used for inverter welding machine controller


Used for high-power audio equipment



Maximum Ratings and Electrical Characteristics:


Rating at 25℃ ambient temperature unless otherwise specified.


Single phase, half wave, 60 Hz, resistive or inductive load.



product data:


Maximum Repetitive Voltage VRM Maximum reverse peak voltage: 400V



Maximum DC Rectified Current TA = 25℃ IR Maximum forward current: 10μA


At rated DC blocking voltage TA=150℃ IR Maximum forward current: 500μA



Average recified forward current 50Hz sine wave, R-load


With heatsink Tc=85℃ Io :25A


With heatsink Tc=40℃ Io :6A



Maximum Instantaneous Forward Voltage at 12.5A VF Maximum forward voltage drop: 1.1 V



Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load IFSM Maximum forward surge current: 400 A



Dielectric strength Terminals to case, AC 1 minute Current 1mA Vdia :2.75KV



Operating junction temperature Tj Operating junction temperature: 150℃



Storage temperature Tstg Storage temperature range: -40~150℃



Thermal Resistance RθJC Thermal resistance coefficient: 1.2℃/W



Package: S25VB


S25VB40 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codeunknow
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.05 V
Maximum non-repetitive peak forward current400 A
Number of components4
Maximum operating temperature150 °C
Maximum output current25 A
Maximum repetitive peak reverse voltage400 V
surface mountNO

S25VB40 Preview

Download Datasheet
S25VB10 THRU S25VB100
桥式整流器
Bridge Rectifier
■特征
I
o
V
RRM
Features
25A
100V-1000V
■外½尺寸和印记
Outline Dimensions and Mark
S25VB
HOLE FOR 10# SCREW
.661(16.8)
.200(5.10)
DIA
.
.622(15.8)
.212(5.40)
玻璃钝化芯片
Glass passivated chip
耐正向浪涌电流½力高
High surge forward current capability
.031
(0.8)
1.263(32.1) .732(18.6)
1.224(31.1) .693(17.6)
.661(16.8)
.622(15.8)
■用途
Applications
.252(6.4)
.244(6.2)
.102(2.6)
DIA.
.087(2.4)
.578(14.7)
.539(13.7)
1.263(32.1)
1.224(31.1)
½一般电源单相桥式整流用
General purpose 1 phase Bridge
rectifier applications
.984
MAX.
(25)
.413(10.5)
.374(9.5)
Dimensions for inches and millimeters
■极限值(绝对最大额定值)
Limiting Values(Absolute Maximum Rating)
参数名称
Item
反向重复峰值电压
Repetitive Peak Reverse
Voltage
平均整流输出电流
Average Rectified Output
Current
正向(不重复)浪涌电流
Surge(Non-
epetitive)Forward Current
正向浪涌电流的平方对电流
浪涌持续时间的积分值
Current Squared Time
存储温度
Storage Temperature
结温
Junction Temperature
绝缘耐压
Dielectric Strength
符号 单½
Symbol Unit
V
RRM
V
条件
Conditions
S25VB
10
100
20
200
40
400
25
6
400
60
600
80 100
800 1000
I
O
A
用散热器
Tc=85℃
60Hz正弦波,
With heatsink Tc=85℃
电阻负½½
60Hz sine
无散热器
Ta=40℃
wave, R-load Without heatsink Ta=40℃
60H
Z
正弦波,一个周期,T
a
=25℃
60H
Z
sine wave, 1 cycle, T
a
=25℃
1ms≤t<8.3ms Tj=25℃,单个二极管
1ms≤t<8.3ms Tj=25℃,Rating of per diode
I
FSM
A
2
It
2
AS
660
-40 ~+150
-40~+150
T
stg
T
j
V
dis
KV
端子与外壳之间外加交流电,一分钟
Terminals to case,AC 1 minute
2.5
■电特性 (T
a=25℃
除非另有规定)
Electrical Characteristics
(T
a
=25℃ Unless otherwise specified)
参数名称
Item
正向峰值电压
Peak Forward Voltage
反向峰值电流
Peak Reverse Current
热阻
Thermal Resistance
符号
单½
Symbol Unit
V
FM
I
RRM
R
θ
J-C
V
μA
℃/W
测试条件
Test Condition
I
FM
=12.5A,
脉冲测试,单个二极管的额定值
I
FM
=12.5A, Pulse measurement, Rating of per
V
RM
=V
RRM
,脉冲测试,单个二极管的额定值
V
RM
=V
RRM
, Pulse measurement, Rating of per diode
结和管壳之间
Between junction and case
最大值
Max
1.05
10
1.5
Document Number 0070
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股½有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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