6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Parameter Name | Attribute value |
Number of terminals | 4 |
Number of components | 4 |
Maximum average input current | 6 A |
Processing package description | PLASTIC, GBU, 4 PIN |
state | CONSULT MFR |
packaging shape | Rectangle |
Package Size | Flange mounting |
Terminal form | THROUGH-hole |
terminal coating | NOT SPECIFIED |
Terminal location | single |
Packaging Materials | Plastic/Epoxy |
structure | Bridge, 4 ELEMENTS |
Diode component materials | silicon |
Diode type | bridge rectifier diode |
Phase | 1 |
Maximum repetitive peak reverse voltage | 600 V |
Maximum non-repetitive peak forward current | 200 A |
GBU8J | GBU8A_15 | GBU8A | GBU8B | GBU8D | GBU8M | GBU8G | |
---|---|---|---|---|---|---|---|
Description | 6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE | 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE | 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE | 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE | 8 A, SILICON, BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE |