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STB60L60A

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size164KB,7 Pages
ManufacturerSamHop Microelectronics Corp.
Websitehttp://www.samhop.com.tw
Download Datasheet Parametric Compare View All

STB60L60A Overview

Transistor

STB60L60A Parametric

Parameter NameAttribute value
MakerSamHop Microelectronics Corp.
package instruction,
Reach Compliance Codeunknown
Gr
Pr
STB/P60L60A
Ver 3.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
60V
I
D
65A
R
DS(ON)
(m
Ω
) Typ
15
@
VGS=10V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
D
G
S
G
D
S
G
S TP S E R IE S
TO-220
S TB S E R IE S
TO-263(DD-P AK)
S
ABSOLUTE MAXIMUM RATINGS (
T
C
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
Avalanche Energy
d
b
a
Limit
60
±20
T
C
=25 °C
T
C
=70 °C
65
54
190
156
a
Units
V
V
A
A
A
mJ
W
W
°C
Maximum Power Dissipation
T
C
=25°C
T
C
=70°C
125
87.5
-55 to 175
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
R
JA
Thermal Resistance, Junction-to-Ambient
1.2
62.5
°C/W
°C/W
Details are subject to change without notice.
Oct,13,2011
1
www.samhop.com.tw

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