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EPD-310-0-0.3-D

Description
Photo Diode
CategoryLED optoelectronic/LED    photoelectric   
File Size65KB,1 Pages
ManufacturerJenoptik AG
Download Datasheet Parametric View All

EPD-310-0-0.3-D Overview

Photo Diode

EPD-310-0-0.3-D Parametric

Parameter NameAttribute value
MakerJenoptik AG
Reach Compliance Codeunknown
UV-Photodiodes
Wavelength range
Type
UV glass with filter
Technology
EPD-310-0-0.3-C/D
*
Case
UVB
Description
SiC
TO-5
High spectral sensitivity in the UVB range
(290 nm - 330nm), low cost chip based on SiC
Environmental technology, analytical techniques,
medical
applications,
industrial
sensors,
inspecting and controlling of UV radiation as well
as for more general purposes
Responsivity
1,2
1
0,8
0,6
0,4
0,2
0
180
Applications
Features
Mounted in hermetically sealed TO-5 package
with diffuse UV glass window (clear glass
window available on request) and filter
5,35
0,2
Ø 0,45
230
280
330
380
Wavelength, nm
Ø 9,0
Ø 7,55
Ø 8,33
Cathode
Ø 9,10
5,08
Anode
Chip Location
13,5
TO-5
Parameter
Chip sizes
Active area
Max. dark current
Spectral range at 0.1 maximum
Peak sensitivity wavelength
Short circuit current at
λ=320nm
Temperature coefficient of I
K
Capacity
Maximal reverse voltage
Operating temperature range
Storage temperature range
Test
conditions
Symbol
A
Value
0.3 x 0.3
0.056
100
290 – 330
310
0.6
0.1
20
20
-40 to +70
-40 to +100
Units
mm
mm²
fA
nm
nm
nA
%/K
pF
V
°C
°C
V
R
= -1V
I
D
λ
min
max
λ
p
I
K
TCI
K
C
V
R
T
amb
T
stg
E=100µW/cm
²
U
R
= 0V
I
R
=100 µA
*
C = clear glass window / D = diffuse glass window
rev.01/06
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str. 325 b, Hs. 201, Tel.: +49-30-6576 2543, Fax.: +49-30-6576 2545

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