UNISONIC TECHNOLOGIES CO., LTD
11N40
11.4A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
The
11N40
uses UTC’s advanced proprietary, planar stripe,
DMOS technology to provide excellent R
DS(ON)
, low gate charge
and operation with low gate voltages. This device is suitable for
use as a load switch or in PWM applications.
Power MOSFET
FEATURES
* R
DS(ON)
= 0.52Ω @V
GS
= 10 V
* Ultra Low Gate Charge ( Typical 27 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 20 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
11N40L-TA3-T
11N40G-TA3-T
TO-220
11N40L-TF3-T
11N40G-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R502-219.D
11N40
ABSOLUTE MAXIMUM RATING
(T
C
=25℃, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
400
V
Gate-Source Voltage
V
GSS
±30
V
Continuous Drain Current (T
C
= 25℃)
I
D
11.4
A
Pulsed Drain Current (Note 2)
I
DM
46
A
Avalanche Current (Note 2)
I
AR
11.4
A
Single Pulsed(Note 3)
E
AS
520
mJ
Avalanche Energy
14.7
Repetitive(Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
147
W
P
D
Derate above 25℃
1.18
W/℃
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=7mH, I
AS
=11.4A, V
DD
=50V, R
G
=25Ω, Satarting T
J
=25°C.
4. I
SD
≤
11.4A, di/dt
≤
200A/μs, V
DD
≤BV
DSS
, Satarting T
J
=25°C.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.85
UNIT
℃/W
℃/W
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QW-R502-219.D
11N40
ELECTRICAL CHARACTERISTICS
(T
J
=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BV
DSS
TEST CONDITIONS
Power MOSFET
MIN
400
TYP MAX UNIT
V
1
10
±100
0.42
µA
nA
mV/℃
V
Ω
V
GS
=0 V, I
D
=250 µA
V
DS
=400V, V
GS
=0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=320V, T
C
=125°C
Gate-Body Leakage Current
I
GSS
V
DS
=0 V, V
GS
= ±30 V
Breakdown Voltage Temperature
Coefficient
ΔBV
DSS
/ΔT
J
I
D
=250 µA, Referenced to25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250 µA
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 5.7 A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
V
DD
=200V, I
D
=11.4A,
Turn-ON Rise Time
t
R
R
GEN
=25Ω(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
Total Gate Charge
Q
G
V
DS
=320V, V
GS
=10V,
Gate Source Charge
Q
GS
I
D
=11.4A (Note 1, 2)
Gate Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=11.4 A,V
GS
=0V
Maximum Continuous Drain-Source
I
S
Diode Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0V, dI
F
/dt = 100 A/ s,
I
S
=11.4A (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
2. Independent of operating temperature.
2.0
4.0
0.42 0.52
1100 1400
180 240
20
30
30
100
60
60
27
7.3
12.3
70
210
130
130
35
pF
ns
nC
1.5
11.4
V
A
46
240
1.8
ns
µC
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QW-R502-219.D
11N40
TEST CIRCUIT
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-219.D
11N40
TEST CIRCUIT(Cont.)
D.U.T.
+
V
DS
-
+
-
L
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
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QW-R502-219.D
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