HX6256RBHZC datasheet, PDF - EEWORLD Datasheet

HX6256RBHZC: DescriptionStandard SRAM, 32KX8, 25ns, CMOS, CDIP28; Categorystorage storage; File Size1MB，12 Pages; ManufacturerHoneywell; Websitehttp://www.ssec.honeywell.com/

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HX6256RBHZC Overview

Standard SRAM, 32KX8, 25ns, CMOS, CDIP28

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Honeywell
package instruction	DIP, DIP28,.6
Reach Compliance Code	unknown
Maximum access time	25 ns
I/O type	COMMON
JESD-30 code	R-XDIP-T28
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	32KX8
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.0005 A
Minimum standby current	2.5 V
Maximum slew rate	0.004 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
total dose	1M Rad(Si) V

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