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6116SA35P

Description
Standard SRAM, 2KX8, 35ns, CMOS, PDIP24, 0.600 INCH, PLASTIC, DIP-24
Categorystorage    storage   
File Size560KB,10 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric View All

6116SA35P Overview

Standard SRAM, 2KX8, 35ns, CMOS, PDIP24, 0.600 INCH, PLASTIC, DIP-24

6116SA35P Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeDIP
package instruction0.600 INCH, PLASTIC, DIP-24
Contacts24
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum access time35 ns
I/O typeCOMMON
JESD-30 codeR-PDIP-T24
JESD-609 codee0
memory density16384 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals24
word count2048 words
character code2000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP24,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum standby current0.002 A
Minimum standby current4.5 V
Maximum slew rate0.1 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn85Pb15)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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