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UK1398L-T92-K

Description
N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING
CategoryDiscrete semiconductor    The transistor   
File Size231KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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UK1398L-T92-K Overview

N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

UK1398L-T92-K Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-92
package instructionLEAD FREE PACKAGE-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)0.1 A
Maximum drain-source on-resistance40 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
UK1398
N-CHANNEL MOSFET FOR HIGH
SPEED SWITCHING
DESCRIPTION
Power MOSFET
The UTC
UK1398
uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* R
DS(ON)
<40Ω @ V
GS
=2.5V, I
D
=10mA
* R
DS(ON)
<20Ω @ V
GS
=4.0V, I
D
=10mA
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
-
UK1398G-AE3-R
UK1398L-T92-B
UK1398G-T92-B
UK1398L-T92-K
UK1398G-T92-K
Package
SOT-23
TO-92
TO-92
Pin Assignment
1
2
3
S
G
D
S
D
G
S
D
G
Packing
Tape Reel
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-256.J

UK1398L-T92-K Related Products

UK1398L-T92-K UK1398_15 UK1398G-AE3-R UK1398G-T92-B UK1398G-T92-K
Description N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING
Is it Rohs certified? conform to - conform to conform to conform to
Maker UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code TO-92 - - TO-92 TO-92
package instruction LEAD FREE PACKAGE-3 - HALOGEN FREE PACKAGE-3 HALOGEN FREE PACKAGE-3 HALOGEN FREE PACKAGE-3
Contacts 3 - 3 3 3
Reach Compliance Code compli - compli compli compli
ECCN code EAR99 - EAR99 EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 50 V - 50 V 50 V 50 V
Maximum drain current (ID) 0.1 A - 0.1 A 0.1 A 0.1 A
Maximum drain-source on-resistance 40 Ω - 40 Ω 40 Ω 40 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-92 - - TO-92 TO-92
JESD-30 code O-PBCY-T3 - R-PDSO-G3 O-PBCY-T3 O-PBCY-T3
Number of components 1 - 1 1 1
Number of terminals 3 - 3 3 3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND - RECTANGULAR ROUND ROUND
Package form CYLINDRICAL - SMALL OUTLINE CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL
surface mount NO - YES NO NO
Terminal form THROUGH-HOLE - GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM - DUAL BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON SILICON
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