UNISONIC TECHNOLOGIES CO., LTD
UF3710
57A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
UF3710
uses advanced process technology to
provide excellent R
DS(ON)
, low gate charge and operation with low
gate voltages. This device is suitable for use as a load switch or
in PWM applications.
Power MOSFET
FEATURES
* R
DS(ON)
= 23mΩ @V
GS
= 10 V
* Ultra low gate charge ( typical 130 nC )
* Low reverse transfer Capacitance ( C
RSS
= typical 72 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF3710L-TA3-T
UF3710G-TA3-T
UF3710L-TQ2-T
UF3710G-TQ2-T
UF3710L-TQ2-R
UF3710G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
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QW-R203-036.E
UF3710
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Gate-Source Voltage
V
GSS
±20
V
Drain-Source Voltage
V
DSS
100
V
Continuous (V
GS
=10V)
I
D
57
Drain Current
A
Pulsed (Note 2)
I
DM
230
Avalanche Current (Note 2)
I
AR
57
A
Repetitive(Note 2)
E
AR
20
Avalanche Energy
mJ
Single Pulsed(Note 3)
E
AS
1060 (Note 4)
Power Dissipation
P
D
165
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. T
J
=25°C, L=0.65mH, R
G
=25Ω, I
AS
=57A, V
GS
=10V
4. This is a typical value at device destruction and represents operation outside rated limits.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62
0.75
UNIT
℃
/W
℃
/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
BV
DSS
I
DSS
I
GSS
△
BV
DSS
/△T
J
V
GS(TH)
R
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
TEST CONDITIONS
MIN TYP MAX UNIT
V
GS
=0V, I
D
=250μA
100
V
V
DS
=100V, V
GS
=0V
25
μA
V
GS
=±20V, V
DS
=0V
±100 nA
I
D
=1mμA,Referenced to 25℃
0.13
V/°C
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=28A (Note)
V
DS
=25V, I
D
=28 A
2.0
32
3130
410
72
4.0
23
V
mΩ
S
pF
pF
pF
V
DS
=25V, V
GS
=0V, f =1MHz
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QW-R203-036.E
UF3710
ELECTRICAL CHARACTERISTICS(Cont.)
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=80V, I
D
=28A, V
GS
=10V
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=50V, I
D
=28A, R
G
=2.5Ω
V
GS
=10V (Note)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
V
SD
I
S
=28A, V
GS
=0V (Note)
Maximum Continuous Drain-Source Diode
I
S
MOSFET symbol showing
Forward Current
the integral reverse P-N
Maximum Pulsed Drain-Source Diode
junction diode.
I
SM
Forward Current
Body Diode Reverse Recovery Time
t
rr
I
F
=28A, dI/dt=100A/μs (Note)
Body Diode Reverse Recovery Charge
Q
RR
Note: Pulse width
≤
400μs; duty cycle
≤
2%.
Power MOSFET
130
26
43
12
58
45
47
1.2
57
230
140 220
670 1010
nC
nC
nC
ns
ns
ns
ns
V
A
A
ns
nC
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QW-R203-036.E
UF3710
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
+
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R203-036.E
UF3710
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
50kΩ
12V
0.2μF
0.3μF
Same Type
as D.U.T.
V
GS
V
DS
Q
GS
Q
G
Q
GD
V
GS
DUT
3mA
R
G
R
D
V
G
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R203-036.E
51mcu
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