UT9564L-TN3-R datasheet, PDF - EEWORLD Datasheet

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UT9564L-TN3-R: Description7.3 A, 40 V, 0.028 ohm, P-CHANNEL, Si, POWER, MOSFET; Categorysemiconductor Discrete semiconductor; File Size159KB，4 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/

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UT9564L-TN3-R Overview

7.3 A, 40 V, 0.028 ohm, P-CHANNEL, Si, POWER, MOSFET

UT9564L-TN3-R Parametric

Parameter Name	Attribute value
Number of terminals	8
Minimum breakdown voltage	40 V
Processing package description	HALOGEN FREE, SOP-8
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum ambient power consumption	2.5 W
Channel type	P-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER
Maximum leakage current	7.3 A
Maximum drain on-resistance	0.0280 ohm
Maximum leakage current pulse	30 A

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UNISONIC TECHNOLOGIES CO., LTD

UT9564

Preliminary

Power MOSFET

P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

DESCRIPTION

The UTC

UT9564

is a P-ch enhancement mode power

MOSFET and it uses UTC perfect technology to provide customers

with fast switching, ruggedized device design, low on-resistance and

cost-effectiveness.

The UTC

UT9564

is ideal for applications such as low voltage

applications, DC/DC converters and all commercial-industrial surface

mount applications.

TO-252

FEATURES

* Simple Drive Requirement

* Fast Switching Speed

* Low On-Resistance

SOP-8

SYMBOL

ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

UT9564L-TN3-R

UT9564G-TN3-R

UT9564L-S08-R

UT9564G-S08-R

UT9564L-S08-T

UT9564G-S08-T

Package

TO-252

SOP-8

Pin Assignment

3 4 5 6

S - - -

S G D D

Packing

- Tape Reel

D Tape Reel

Tube

www.unisonic.com.tw

1 of 4

QW-R502-390.c

UT9564L-TN3-R Related Products

	UT9564L-TN3-R	UT9564	UT9564G-S08-R	UT9564G-S08-T	UT9564G-TN3-R	UT9564L-S08-R	UT9564L-S08-T
Description	7.3 A, 40 V, 0.028 ohm, P-CHANNEL, Si, POWER, MOSFET	7.3 A, 40 V, 0.028 ohm, P-CHANNEL, Si, POWER, MOSFET	7.3 A, 40 V, 0.028 ohm, P-CHANNEL, Si, POWER, MOSFET	7.3 A, 40 V, 0.028 ohm, P-CHANNEL, Si, POWER, MOSFET	7.3 A, 40 V, 0.028 ohm, P-CHANNEL, Si, POWER, MOSFET	7.3 A, 40 V, 0.028 ohm, P-CHANNEL, Si, POWER, MOSFET	7.3 A, 40 V, 0.028 ohm, P-CHANNEL, Si, POWER, MOSFET
Number of terminals	8	8	8	8	8	8	8
Minimum breakdown voltage	40 V	40 V	40 V	40 V	40 V	40 V	40 V
Processing package description	HALOGEN FREE, SOP-8	HALOGEN FREE, SOP-8	HALOGEN FREE, SOP-8	HALOGEN FREE, SOP-8	HALOGEN FREE, SOP-8	HALOGEN FREE, SOP-8	HALOGEN FREE, SOP-8
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Number of components	1	1	1	1	1	1	1
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum ambient power consumption	2.5 W	2.5 W	2.5 W	2.5 W	2.5 W	2.5 W	2.5 W
Channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Maximum leakage current	7.3 A	7.3 A	7.3 A	7.3 A	7.3 A	7.3 A	7.3 A
Maximum drain on-resistance	0.0280 ohm	0.0280 ohm	0.0280 ohm	0.0280 ohm	0.0280 ohm	0.0280 ohm	0.0280 ohm
Maximum leakage current pulse	30 A	30 A	30 A	30 A	30 A	30 A	30 A

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