UNISONIC TECHNOLOGIES CO., LTD
UT60T03
N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The
UT60T03
can provide excellent R
DS(ON)
and low gate
charge by using UTC’s advanced trench technology.
Power MOSFET
FEATURES
* Very simple drive requirement
* Very low gate charge
* Fast switching
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT60T03-TF3-R
UT60T03L-TF3-R
UT60T03-TN3-R
UT60T03L-TN3-R
UT60T03-TN3-T
UT60T03L-TN3-T
Package
TO-220F
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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QW-R502-183.B
UT60T03
ABSOLUTE MAXIMUM RATINGS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
D
I
DM
Power MOSFET
RATINGS
UNIT
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
Continuous Drain Current
45
A
Pulsed Drain Current (Note 2)
120
A
TO-220F
56
Power Dissipation (T
C
=25°C)
P
D
W
TO-252
44
Junction Temperature
T
J
+150
℃
Strong Temperature
T
STG
-55 ~ +175
℃
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2 .Pulse width limited by safe operating area.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220F
TO-252
TO-220F
TO-252
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
110
2.66
3.4
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise noted)
PARAMETER
SYMBOL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
Drain-Source Leakage Current
I
DSS
Gate-Body Leakage Current
I
GSS
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
Static Drain-Source On-Resistance(Note 1)
R
DS(ON)
TEST CONDITIONS
V
GS
=0 V, I
D
=250µA
V
DS
=30V, V
GS
=0V
V
GS
= ±20 V
Reference to 25℃, I
D
=1mA
V
DS
=V
GS
, I
D
=250 µA
V
GS
=10 V, I
D
=20 A
V
GS
=4.5 V, I
D
=15 A
MIN
30
TYP MAX UNIT
V
1
µA
±100 nA
V/℃
0.026
3
12
25
1135
200
135
11.6
3.9
7
8.8
57.5
18.5
6.4
1.3
23.3
16
V
mΩ
1
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
= 20V, V
GS
= 4.5V,
Gate Source Charge
Q
GS
I
D
=20 A (Note 1)
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
V
GS
=10V, V
DS
=15V,
Turn-ON Rise Time
t
R
R
D
=0.75Ω, I
D
=20 A,
Turn-OFF Delay Time
t
D(OFF)
R
G
=3.3
Ω
(Note 1)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward On Voltage (Note 1)
V
SD
I
S
=45 A,V
GS
=0V
Reverse Recovery Time
t
RR
I
S
=20 A, V
GS
=0 V,dI/dt=100
A/μs
Reverse Recovery Charge
Q
RR
Note: 1.Pulse width
≤
300us , duty cycle
≤
2%.
2. Essentially independent of operating temperature
pF
nC
ns
V
ns
nC
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QW-R502-183.B
UT60T03
TYPICAL CHARACTERISTICS
125
100
Drain Current,I
D
(A)
75
50
25
0
0
1
2
3
Drain to Source Voltage,V
DS
(V)
4
0
0
Typical Output Characteristics
T
C
=25℃
10V
8.0V
Drain Current,I
D
(A)
60
90
Power MOSFET
Typical Output Characteristics
T
C
=150℃
10V
8.0V
6.0V
6.0V
5.0V
5.0V
30
V
G
=4.0V
1
2
3
4
Drain to Source Voltage,V
DS
(V)
Normalized On-Resistance vs.
Junction Temperature
I
D
=20A
V
G
=10V
5
80
On-Resistance,R
DS(ON)
(mΩ)
On-Resistance vs. Gate Voltage
I
D
=20A
T
C
=25℃
Normalized, R
DS(ON)
2
60
1.6
40
1.2
20
0.8
0
3
5
9
7
Gate-to-Source Voltage,V
GS
(V)
11
0.4
-50
25
100
Junction Temperature,T
J
(℃)
175
UNISONIC TECHNOLOGIES CO., LTD
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Gate Threshold Voltage,V
GS(th)
(V)
Reverse Drain Current, I
S
(A)
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UT60T03
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
Gate to Source Voltage,V
GS
(V)
Normalized Thermal Response (R
thJA
)
1
D=0.5
0.2
0.1
0.1
0.05
0.01
0.02
Single Pulse
Effective Transient Thermal Impedance
Capacitance (pF)
P
DM
t
T
Duty factor=t/T
Peak T
J
=P
DM
×R
thJA
+T
C
0.01
0.00001
0.0001
0.001
Pulse Width,t (s)
0.01
0.1
1
1000
Maximum Safe Operating Area
Drain Current,I
D
(A)
100
100μs
1ms
T
C
=25℃
Single Pulse
1
0.1
10ms
100ms
DC
10
1
Drain-to-Source Voltage,V
DS
(V)
100
10
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www.unisonic.com.tw
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QW-R502-183.B
UT60T03
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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QW-R502-183.B
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