UNISONIC TECHNOLOGIES CO., LTD
UT4430
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
Power MOSFET
The
UT4430
uses UTC advanced technology to provide excellent
R
DS(ON)
, low gate charge and operation with low gate voltages. This
device is suitable for applications, such as high-side DC/DC
conversion, notebook and sever.
FEATURES
* V
DS
(V)=30V
* I
D
=18A (V
GS
= 10V)
* R
DS(ON)
< 5.5mΩ @ V
GS
=10V, I
D
=18A
* R
DS(ON)
< 7.5mΩ @ V
GS
=4.5V, I
D
=15A
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
D: Drain
SOP-8
S: Source
1
S
2
S
Pin Assignment
3
4
5
6
S G D D
7
D
8
D
Packing
Tape Reel
Note:
UT4430G-S08-R
Pin Assignment: G: Gate
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-333.C
UT4430
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
Power MOSFET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current (T
A
=25°C) (Note 2) t≤10s
I
D
18
A
Pulsed Drain Current (Note 3)
I
DM
80
A
Avalanche Current (Note 3)
I
AR
30
A
Repetitive avalanche energy (Note 3)
L=0.3mH
E
AR
135
mJ
Power Dissipation (T
A
=25°C)
P
D
3
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface mounted on 1 in2 copper pad of FR4 board.
3. Pulse width limited by T
J(MAX)
THERMAL DATA
SYMBOL
θ
JA
MIN
TYP
59
MAX
75
UNIT
°C/W
PARAMETER
Junction to Ambient (Note)
Note: Surface mounted on 1 in
2
copper pad of FR4 board
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0V, I
D
=250µA
V
DS
=30V,V
GS
=0V
V
GS
=±20V, V
DS
=0V
V
D S
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=18A
V
GS
=4.5V, I
D
=15A
MIN
30
1
100
1
1.8
4.7
6.2
2.5
5.5
7.5
TYP
MAX UNIT
V
µA
nA
V
mΩ
mΩ
pF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
V
A
ns
nC
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=15V, V
GS
=0 V, f=1MHz
Reverse Transfer Capacitance
C
RSS
Gate Resistance
R
G
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
GS
=10V,V
DS
=15V, R
L
=0.83Ω,
R
GEN
=3Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
Total Gate Charge
Q
G
V
GS
=10 V, V
DS
=15 V, I
D
=18 A
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=1 A, V
GS
=0 V
Diode Continuous Forward Current
I
S
Reverse Recovery Time
t
RR
I
F
=18A, dI/dt=100A/μs
Reverse Recovery Charge
Q
RR
4660 6060 7270
425
638
960
240
355
530
0.2
0.45
0.9
12
8
51.5
8.8
103
18
15
0.7
33.5
22
16
12
70
14
124
80
1
4.5
44
30
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-333.C
UT4430
SWITCHING TIME TEST CIRCUIT
Power MOSFET
Unclamped Inductive Switching (UIS)
Test Circuit
L
V
DS
I
D
V
GS
V
GS
R
G
DUT
V
GS
+
VDC
Unclamped Inductive Switching (UIS)
Waveforms
E
AR
= 1/ 2LI
2
AR
BV
DSS
V
DS
V
DD
I
AR
I
D
-
V
GS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-333.C
UT4430
SWITCHING TIME TEST CIRCUIT
Diode Recovery Test Circuit
V
DS
+
DUT
Power MOSFET
Diode Recovery Waveforms
Q
RR =
- Idt
∫
V
GS
V
DS
-
I
SD
V
GS
L
+
VDC
I
SD
V
DD
V
DS
I
F
dI/dt
I
RM
t
RR
V
DD
-
I
G
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www.unisonic.com.tw
4 of 5
QW-R502-333.C
UT4430
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
Drain Current, I
D
(µA)
200
150
100
50
0
300
250
Drain Current, I
D
(µA)
200
150
100
50
0
0
5
10 15 20 25 30 35
Drain-Source Breakdown Voltage, BV
DSS
(V)
0
2.0
1.5
1.0
0.5
Gate Threshold Voltage, V
TH
(V)
Drain Current, I
D
(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Drain Current, I
D
(A)
5 of 5
QW-R502-333.C
Embedded System
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