UT40N03G-TN3-R datasheet, PDF - EEWORLD Datasheet

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UT40N03G-TN3-R: Description40 Amps, 30 Volts N-CHANNEL POWER MOSFET; CategoryDiscrete semiconductor The transistor; File Size262KB，5 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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UT40N03G-TN3-R Overview

40 Amps, 30 Volts N-CHANNEL POWER MOSFET

UT40N03G-TN3-R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	40 A
Maximum drain-source on-resistance	0.017 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	169 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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UNISONIC TECHNOLOGIES CO., LTD

UT40N03

40 Amps, 30 Volts

N-CHANNEL POWER MOSFET

DESCRIPTION

The

UT40N03

power MOSFET provide the designer with the

best combination of fast switching,ruggedized device design, low

on-resistance and cost-effectiveness

Power MOSFET

FEATURES

* R

DS(ON)

= 17mΩ @V

= 10 V

* Low capacitance

* Optimized gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

UT40N03L-TN3-R

UT40N03G-TN3-R

UT40N03L-TM3-T

UT40N03G-TM3-T

Package

TO-252

TO-251

Pin Assignment

Packing

Tape Reel

Tube

www.unisonic.com.tw

1 of 5

QW-R502-160.C

UT40N03G-TN3-R Related Products

	UT40N03G-TN3-R	UT40N03	UT40N03G-TM3-T	UT40N03L-TM3-T	UT40N03L-TN3-R
Description	40 Amps, 30 Volts N-CHANNEL POWER MOSFET	40 Amps, 30 Volts N-CHANNEL POWER MOSFET	40 Amps, 30 Volts N-CHANNEL POWER MOSFET	40 Amps, 30 Volts N-CHANNEL POWER MOSFET	40 Amps, 30 Volts N-CHANNEL POWER MOSFET
Is it Rohs certified?	conform to	-	conform to	conform to	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD	-	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code	TO-252	-	TO-251	TO-251	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G2	-	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2
Contacts	4	-	3	3	4
Reach Compliance Code	compli	-	compli	compli	compli
ECCN code	EAR99	-	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	-	30 V	30 V	30 V
Maximum drain current (ID)	40 A	-	40 A	40 A	40 A
Maximum drain-source on-resistance	0.017 Ω	-	0.017 Ω	0.017 Ω	0.017 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252	-	TO-251	TO-251	TO-252
JESD-30 code	R-PSSO-G2	-	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2
Number of components	1	-	1	1	1
Number of terminals	2	-	3	3	2
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	IN-LINE	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	169 A	-	169 A	169 A	169 A
surface mount	YES	-	NO	NO	YES
Terminal form	GULL WING	-	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	-	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON

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