UNISONIC TECHNOLOGIES CO., LTD
UT30P04
P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
UT30P04
is a P-channel enhancement mode Power
MOSFET, providing customers fast switching, ruggedized device
design, low on-resistance and cost-effectiveness with UTC’s
advanced technology.
FEATURES
* Low on-Resistance
* Fast Switching Speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
TO-252
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
Ordering Number
Lead Free
Halogen Free
UT30P04L-TN3-R
UT30P04G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
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UT30P04
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C Unless Otherwise specified)
SYMBOL
V
DS
V
GS
RATINGS
UNIT
-40
V
±20
V
T
C
=25°C
-21
A
I
D
Continuous Drain Current
T
C
=70°C
-17
A
Pulsed Drain Current (Note 2)
I
DM
-70
A
Avalanche Current
I
AS
-27
A
Avalanche Energy (Note 3)
L=0.1mH
E
AS
36
mJ
T
C
=25°C
30
W
Power Dissipation
P
D
T
C
=70°C
20
W
Operating Junction Temperature
T
J
-55~150
°C
Storage Temperature
T
STG
-55~150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature.
3. V
DD
=-20V. Starting T
J
=25°C.
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
40
4.1
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
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UT30P04
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
I
GSS
I
D(ON)
V
GS(TH)
R
DS(ON)
g
FS
R
g
C
ISS
C
OSS
C
RSS
TEST CONDITIONS
I
D
=-250µA, V
GS
=0V
V
DS
=-32V, V
GS
=0V
V
DS
=-30V, V
GS
=0V, T
J
=125°C
V
DS
=0V, V
GS
=±20V
V
DS
=-5V, V
GS
=-10V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-5V, I
D
=-8A
V
GS
=-7V, I
D
=-8A
V
GS
=-10V, I
D
=-10A
V
DS
=-10V, I
D
=-10A
V
GS
=0V, V
DS
=0V, f=1.0MHz
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
On-State Drain Current (Note 1)
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State
Resistance (Note 1)
Forward Transconductance (Note 1)
Gate Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
GATE CHARGE
(Note 2)
Total Gate Charge
Power MOSFET
MIN TYP MAX UNIT
-40
1
10
±250
-70
-1
-2.5
65
35
30
20
4.95
1090
175
91
17
8.5
5.5
3
6
16
26
10
-21
-1.2
15.5
7.9
-3
73
50
40
V
µA
nA
A
V
mΩ
S
Ω
V
GS
=0V, V
DS
=-20V, f=1.0MHz
pF
Gate to Source Charge
Gate to Drain Charge
SWITCHING PARAMETERS
(Note 2)
Turn-ON Delay Time
t
D(ON)
V
GS
=-10V, V
DS
=-20V, I
D
≈-10A,
Rise Time
t
R
R
GS
=6Ω, R
L
=2Ω
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current
I
S
1
Drain-Source Diode Forward Voltage
V
SD
I
F
=-10A, V
GS
=0V
Reverse Recovery Time
t
RR
I
F
=-10A, dI
F
/dt=100A/µs
Reverse Recovery Charge
Q
RR
Notes: 1. Pulsde test: Pulse width
≤
300µsec, duty cycle
≤
2%.
2. Independent of operating temperature.
Q
G
(V
GS
=-10V)
Q
G
(V
GS
=-4.5V)
V
DS
=0.5V
(BR)DSS
, I
D
=-18A
Q
GS
Q
GD
nC
ns
ns
ns
ns
A
V
ns
nC
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UT30P04
TYPICAL CHARACTERISTICS
Power MOSFET
Drain Current, -I
D
(µA)
Drain-Source On-State Resistance
Characteristics
14
12
Drain Current, -I
D
(A)
10
8
6
4
2
0
0
100
200
300
400 500
Drain to Source Voltage, -V
DS
(mV)
V
GS
=-7V, I
D
=-8A
Drain Current, -I
D
(A)
V
GS
=-10V, I
D
=-10A
V
GS
=-5V, I
D
=-8A
Drain Current, -I
D
(µA)
Drain Current vs. Source to Drain Voltage
14
12
10
8
6
4
2
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage, -V
SD
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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