KM48V8000BS-6C datasheet, PDF - EEWORLD Datasheet

KM48V8000BS-6C: DescriptionFast Page DRAM, 8MX8, 60ns, CMOS, PDSO32; Categorystorage storage; File Size791KB，20 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM48V8000BS-6C Overview

Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
package instruction	TSOP, TSOP32,.46
Reach Compliance Code	unknown
Maximum access time	60 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
memory density	67108864 bit
Memory IC Type	FAST PAGE DRAM
memory width	8
Humidity sensitivity level	3
Number of terminals	32
word count	8388608 words
character code	8000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP32,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	NO
Maximum standby current	0.0005 A
Maximum slew rate	0.08 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40

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