K7M803625A
K7M801825A
Document Title
256Kx36 & 512Kx18 Flow-Through NtRAM
TM
256Kx36 & 512Kx18-Bit Flow Through NtRAM
TM
Revision History
Rev. No.
0.0
1.0
History
1. Initial document.
1. Final spec Release.
2. Add 119BGA(7x17 Ball Grid Array Package)
Draft Date
May. 24. 2000
July. 03. 2000
Remark
Preliminary
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
July 2000
Rev 1.0
K7M803625A
K7M801825A
256Kx36 & 512Kx18 Flow-Through NtRAM
TM
256Kx36 & 512Kx18-Bit Flow Through NtRAM
TM
FEATURES
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O
or 2.5V+0.4V/-0.125V for 2.5V I/O
• Byte Writable Function.
•
Εnable
clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data
contention .
• A interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• TTL-Level Three-State Outputs.
• 100-TQFP-1420A /119BGA(7x17 Ball Grid Array Package) .
GENERAL DESCRIPTION
The K7M803625A and K7M801825A are 9,437,184-bit Syn-
chronous Static SRAMs.
The NtRAM
TM
, or No Turnaround Random Access Memory uti-
lizes all bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output
enable and linear burst order are synchronized to input clock.
Burst order control must be tied "High or Low".
Asynchronous inputs include the sleep mode enable(ZZ).
Output Enable controls the outputs at any given time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-chip
write pulse generation
and provides increased timing flexibility for incoming signals.
For read cycles, Flow-Through SRAM allows output data to
simply flow freely from the memory array.
The K7M803625A and K7M801825A are implemented with
SAMSUNG′s high performance CMOS technology and is avail-
able in 100pin TQFP and 119BGA packages. Multiple power
and ground pins minimize ground bounce.
FAST ACCESS TIMES
Parameter
Cycle Time
Clock Access Time
Output Enable Access Time
Symbol -75 -85 -90 -10 Unit
t
CYC
t
CD
t
OE
8.5 10
10
12
ns
7.5 8.5 9.0 10.0 ns
3.5 3.5 3.5 3.5
ns
LOGIC BLOCK DIAGRAM
LBO
A [0:17]or
A [0:18]
ADDRESS
REGISTER
A
2
~A
17
or A
2
~A
18
A
0
~A
1
BURST
ADDRESS
COUNTER
A′
0
~A′
1
256Kx36 , 512Kx18
MEMORY
ARRAY
CLK
CKE
K
WRITE
ADDRESS
REGISTER
K
DATA-IN
REGISTER
CONTROL
LOGIC
CS
1
CS
2
CS
2
ADV
WE
BW
x
(x=a,b,c,d or a,b)
OE
ZZ
DQa
0
~ DQd
7
or DQa
0
~ DQb
8
DQPa ~ DQPd
CONTROL
REGISTER
CONTROL
LOGIC
BUFFER
36 or 18
NtRAM
TM
and No Turnaround Random Access Memory are trademarks of Samsung,
and its architecture and functionalities are supported by NEC and Toshiba.
-2-
July 2000
Rev 1.0
K7M803625A
K7M801825A
PIN CONFIGURATION
(TOP VIEW)
BWd
256Kx36 & 512Kx18 Flow-Through NtRAM
TM
BWb
BWa
BWc
CKE
ADV
N.C.
CLK
CS
1
CS
2
CS
2
V
DD
V
SS
WE
A
17
83
OE
A
6
A
7
A
8
82
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
81
A
9
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
N.C.
N.C.
N.C.
N.C.
V
DD
A
5
A
4
A
3
A
2
A
1
A
0
A
10
A
11
A
12
A
13
A
14
A
15
PIN NAME
SYMBOL
A
0
- A
17
PIN NAME
Address Inputs
TQFP PIN NO.
SYMBOL
V
DD
V
SS
N.C.
DQa
0
~a
7
DQb
0
~b
7
DQc
0
~c
7
DQd
0
~d
7
DQPa~P
d
V
DDQ
V
SSQ
PIN NAME
TQFP PIN NO.
32,33,34,35,36,37,44
45,46,47,48,49,50,81
82,83,99,100
ADV
Address Advance/Load
85
WE
Read/Write Control Input 88
CLK
Clock
89
CKE
Clock Enable
87
CS
1
Chip Select
98
CS
2
Chip Select
97
CS
2
Chip Select
92
BWx(x=a,b,c,d) Byte Write Inputs
93,94,95,96
OE
Output Enable
86
ZZ
Power Sleep Mode
64
LBO
Burst Mode Control
31
Power Supply(+3.3V) 15,16,41,65,91
Ground
14,17,40,66,67,90
No Connect
38,39,42,43,84
Data Inputs/Outputs
52,53,56,57,58,59,62,63
68,69,72,73,74,75,78,79
2,3,6,7,8,9,12,13
18,19,22,23,24,25,28,29
51,80,1,30
LBO
V
SS
Output Power Supply 4,11,20,27,54,61,70,77
(2.5V or 3.3V)
Output Ground
5,10,21,26,55,60,71,76
Notes :
1. The pin 84 is reserved for address bit for the 16Mb NtRAM.
2. A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
-3-
A
16
50
DQPc
DQc
0
DQc
1
V
DDQ
V
SSQ
DQc
2
DQc
3
DQc
4
DQc
5
V
SSQ
V
DDQ
DQc
6
DQc
7
Vss
V
DD
V
DD
V
SS
DQd
0
DQd
1
V
DDQ
V
SSQ
DQd
2
DQd
3
DQd
4
DQd
5
V
SSQ
V
DDQ
DQd
6
DQd
7
DQPd
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
K7M803625A(256Kx36)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQPb
DQb
7
DQb
6
V
DDQ
V
SSQ
DQb
5
DQb
4
DQb
3
DQb
2
V
SSQ
V
DDQ
DQb
1
DQb
0
V
SS
V
SS
V
DD
ZZ
DQa
7
DQa
6
V
DDQ
V
SSQ
DQa
5
DQa
4
DQa
3
DQa
2
V
SSQ
V
DDQ
DQa
1
DQa
0
DQPa
July 2000
Rev 1.0
K7M803625A
K7M801825A
PIN CONFIGURATION
(TOP VIEW)
256Kx36 & 512Kx18 Flow-Through NtRAM
TM
BWb
BWa
CKE
ADV
CS
2
N.C.
N.C.
N.C.
CLK
CS
1
CS
2
V
DD
V
SS
WE
A
18
83
OE
A
6
A
7
A
8
82
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
81
A
9
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
N.C.
N.C.
N.C.
N.C.
V
DD
A
5
A
4
A
3
A
2
A
1
A
0
A
11
A
12
A
13
A
14
A
15
A
16
PIN NAME
SYMBOL
A
0
- A
18
PIN NAME
Address Inputs
TQFP PIN NO.
32,33,34,35,36,37,44
45,46,47,48,49,50,80
81,82,83,99,100
85
88
89
87
98
97
92
93,94
86
64
31
SYMBOL
V
DD
V
SS
N.C.
PIN NAME
Power Supply(+3.3V)
Ground
No Connect
TQFP PIN NO.
15,16,41,65,91
14,17,40,66,67,90
1,2,3,6,7,25,28,29,30,
38,39,42,43,51,52,53,
56,57,75,78,79,84,95,96
58,59,62,63,68,69,72,73,74
8,9,12,13,18,19,22,23,24
ADV
WE
CLK
CKE
CS
1
CS
2
CS
2
BWx(x=a,b)
OE
ZZ
LBO
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Power Sleep Mode
Burst Mode Control
LBO
V
SS
DQa
0
~a
8
DQb
0
~b
8
Data Inputs/Outputs
V
DDQ
V
SSQ
Output Power Supply
(2.5V or 3.3V)
Output Ground
A
17
50
N.C.
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
N.C.
DQb
8
DQb
7
V
SSQ
V
DDQ
DQb
6
DQb
5
V
SS
V
DD
V
DD
V
SS
DQb
4
DQb
3
V
DDQ
V
SSQ
DQb
2
DQb
1
DQb
0
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
K7M801825A(512Kx18)
A
10
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
DQa
0
DQa
1
DQa
2
V
SSQ
V
DDQ
DQa
3
DQa
4
V
SS
V
SS
V
DD
ZZ
DQa
5
DQa
6
V
DDQ
V
SSQ
DQa
7
DQa
8
N.C.
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
Notes :
1. The pin 84 is reserved for address bit for the 16Mb NtRAM.
2. A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
-4-
July 2000
Rev 1.0
Talking about work
京公网安备 11010802033920号
EEWORLD
