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FR1J

Description
1 A, SILICON, SIGNAL DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size2MB,2 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
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FR1J Overview

1 A, SILICON, SIGNAL DIODE, DO-214AA

FR1A THRU FR1M
50V-1000V
SURFACE MOUNT FAST RECOVERY RECTIFIERS
1.0A
Features
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Easy pick and place
• Fast Recovery times for high efficiency
• Plastic package has UL Flammability Classification 94V-0
Mechanical Data
• Case: Molded plastic, SMA (DO-214AC)
• Terminals: Solder plated, solderable per MIL-STD-750,
method 2026 guaranteed
• Polarity: color band denotes cathode end
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
FR1A FR1B FR1D
FR1G FR1J
FR1K FR1M
UNITS
VOLTS
VOLTS
VOLTS
Amp
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=90 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
t
rr
C
J
R
q
JA
T
J
,
T
STG
150
30.0
1.3
5.0
50.0
250
15.0
50.0
-65 to +150
500
Amps
Volts
u
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com

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FR1J FR1A FR1B FR1D FR1G FR1K FR1M
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