MBR2035CT THRU MBR20200CT
ITO-220AB
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
o
C/10 seconds,0.25”(6.35mm)from case
15.0± 0.5
4.5± 0.2
10.2± 0.2
3.1
+0.2
-0.1
φ
3.3± 0.1
16.5± 0.3
1
13.5± 0.5
PIN
2 3
4.0± 0.3
1.4± 0.1
0.6± 0.1
8.2± 0.2
Mechanical Data
Cases: JEDEC TO-220 molded plastic
Terminals: Leads solderable per MIL-STD-750, Method
2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
2.6± 0.15
0.6± 0.1
Dimensions in millimeters
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
at T
C
=135 C
Peak Repetitive Forward Current (Rated V
R
,
Square Wave, 20KHz) at Tc=135
o
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
O
IF=10A, TC=25 C
IF=10A, TC=125
O
C
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FRM
I
FSM
I
RRM
V
F
MBR20 MBR20 MBR20 MBR20 MBR20 MBR20 MBR20
35CT 45CT 50CT 60CT 100CT 150CT 200CT
Units
V
V
V
A
A
A
35
24
35
45
31
45
50
35
50
60
42
60
20
20.0
150
100
70
100
150
105
150
200
140
200
1.0
-
0.57
0.79
0.67
0.5
0.80
0.68
1.0
0.82
0.70
A
V
Maximum Instantaneous Reverse Current @ Tc=25℃
at Rated DC Blocking Voltage
@ Tc=125℃
Voltage Rate of Change, (Rated V
R
)
Typical Junction Capacitance
Typical Thermal Resistance Per Leg (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
I
R
dV/dt
Cj
RθJC
T
J
T
STG
0.1
15
0.15
10,000
1.0
20
320
mA
mA
V/uS
pF
400
1.0
-65 to +150
-65 to +175
2.0
℃/W
℃
℃
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate.
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mail:lge@luguang.cn
? 3.2± 0.2
2.6± 0.2
MBR2035CT THRU MBR20200CT
FIG.1- FORWARD CURRENT DERATING CURVE
20
150
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
PEAK FORWARD SURGE CURRENT. (A)
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
AVERAGE FORWARD CURRENT. (A)
RESISTIVE OR
INDUCTIVE LOAD
16
125
100
75
12
8
50
4
25
0
0
50
CASE TEMPERATURE. ( C)
o
100
150
0
1
10
NUMBER OF CYCLES AT 60Hz
100
40
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
50
FIG.4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
INSTANTANEOUS FORWARD CURRENT. (A)
10
Tj=150
0
C
10
INSTANTANEOUS REVERSE CURRENT. (mA)
Tj=125
0
C
1
1
Tj=25
0
C
Tj=75
0
C
0.1
0.1
MBR2035CT-MBR2045CT
MBR2050CT & MBR2060CT
MBR20100CT
MBR20200CT
0.01
Tj=25
0
C
Pulse Width=300 s
1% Duty Cycle
0.01
0
0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.001
0.1
0.2
0.3 0.4
0.5
0
20
40
60
MBR2035CT-MBR2045CT
MBR2050CT & MBR20100CT
MBR20200CT
80
100
120
140
FORWARD VOLTAGE. (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
5,000
Tj=25
0
C
f=1.0MHz
Vsig=50mVp-p
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
100
JUNCTION CAPACITANCE.(pF)
2,000
TRANSIENT THERMAL IMPEDANCE. (
O
C/W)
100
10.0
1,000
500
1
200
MBR2035CT-MBR2045CT
MBR2050CT & MBR20200CT
100
0.1
1.0
10
REVERSE VOLTAGE. (V)
0.1
0.01
0.1
1
T, PULSE DURATION. (sec)
10
100
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mail:lge@luguang.cn
Analog electronics
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