SMBJ130ATR datasheet, PDF - EEWORLD Datasheet

SMBJ130ATR: Description600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC PACKAGE-2; CategoryDiscrete semiconductor diode; File Size197KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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SMBJ130ATR Overview

600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC PACKAGE-2

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
Parts packaging code	DO-214AA
package instruction	R-PDSO-C2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum breakdown voltage	159 V
Minimum breakdown voltage	144 V
Breakdown voltage nominal value	151.5 V
Maximum clamping voltage	209 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
JESD-609 code	e0
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	1.38 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	130 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Tin/Lead (Sn90Pb10)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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