2N4894 datasheet, PDF - EEWORLD Datasheet

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2N4894: DescriptionUJT; CategoryDiscrete semiconductor The transistor; File Size70KB，2 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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2N4894 Overview

UJT

2N4894 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	_compli
Configuration	SINGLE
Maximum emitter current	50 mA
Maximum base-to-base voltage	25 V
maximum eigendeviation ratio	0.86
minimum intrinsic deviation ratio	0.74
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Maximum peak current	1 mA
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
Maximum static resistance between bases	12 kΩ
Minimum static resistance between bases	4 kΩ
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Minimum valley point current	2 mA
Base Number Matches	1

2N4894 Related Products

	2N4894	2N4891	2N4892	2N4893
Description	UJT	UJT	UJT	UJT
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	_compli	_compli	_compli	_compli
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Maximum emitter current	50 mA	50 mA	50 mA	50 mA
Maximum base-to-base voltage	25 V	25 V	25 V	25 V
maximum eigendeviation ratio	0.86	0.82	0.69	0.82
minimum intrinsic deviation ratio	0.74	0.55	0.51	0.55
JESD-30 code	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Maximum peak current	1 mA	5 mA	2 mA	2 mA
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum static resistance between bases	12 kΩ	9.1 kΩ	9.1 kΩ	12 kΩ
Minimum static resistance between bases	4 kΩ	4 kΩ	4 kΩ	4 kΩ
surface mount	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Minimum valley point current	2 mA	2 mA	4 mA	2 mA
Base Number Matches	1	1	1	1

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