IS62LV1288BLL-70HI datasheet, PDF

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IS62LV1288BLL-70HI: DescriptionStandard SRAM, 128KX8, 70ns, CMOS, PDSO32, STSOP1-32; Categorystorage storage; File Size47KB，10 Pages; ManufacturerIntegrated Silicon Solution ( ISSI )

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IS62LV1288BLL-70HI Overview

Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, STSOP1-32

IS62LV1288BLL-70HI Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Integrated Silicon Solution ( ISSI )
Parts packaging code	TSOP1
package instruction	STSOP1-32
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	11.8 mm
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP32,.56,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.000015 A
Minimum standby current	2 V
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8 mm

IS62LV1288BLL-70HI Preview

IS62LV1288BLL

128K x 8 LOW POWER and LOW Vcc

CMOS STATIC RAM

FEATURES

• Access times of 70 ns

•

Low active power: 60 mW (typical)

•

Low standby power: 6 µW (typical) CMOS

standby

• Low data retention voltage: 2V (min.)

• Ultra Low Power

• Output Enable (OE) and two Chip Enable

(CE1 and CE2) inputs for ease in applications

• TTL compatible inputs and outputs

• Single 3.0V (min.) to 3.6V (max.) power supply

• Industrial temperature available

• Available in 32-pin TSOP (Type I), 32-pin

STSOP, and 450-mil SOP

ISSI

DESCRIPTION

AUGUST 2002

The

ISSI

IS62LV1288BLL is a low power and low

Vcc,131,072-word by 8-bit CMOS static RAM. It is

fabricated using

ISSI

's high-performance CMOS

technology. This highly reliable process coupled with

innovative circuit design techniques, yields higher

performance and low power consumption devices.

When

CE1

is HIGH or CE2 is LOW (deselected), the

device assumes a standby mode at which the power

dissipation can be reduced by using CMOS input levels.

Easy memory expansion is provided by using two Chip

Enable inputs,

CE1

and CE2. The active LOW Write Enable

(WE) controls both writing and reading of the memory.

The IS62LV1288LL is available in 32-pin TSOP (Type I),

STSOP (8 x 13.4mm), and 450-mil plastic SOP (525-mil

pin to pin) packages.

FUNCTIONAL BLOCK DIAGRAM

A0-A16

DECODER

512 X 2048

MEMORY ARRAY

VCC

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

COLUMN I/O

CE1

CE2

CONTROL

CIRCUIT

assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device

specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. A

08/10/02

IS62LV1288BLL

PIN CONFIGURATION

32-Pin SOP (Q)

A16

A14

A12

I/O0

I/O1

I/O2

GND

VCC

A15

CE2

A13

A11

A10

CE1

I/O7

I/O6

I/O5

I/O4

I/O3

ISSI

PIN CONFIGURATION

32-Pin TSOP (Type I) (T) and STSOP (Type 1) (H)

A11

A13

CE2

A15

VCC

A16

A14

A12

A10

CE1

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

PIN DESCRIPTIONS

A0-A16

CE1

CE2

I/O0-I/O7

Vcc

GND

Address Inputs

Chip Enable 1 Input

Chip Enable 2 Input

Output Enable Input

Write Enable Input

Input/Output

No Connection

Power

Ground

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. A

08/10/02

IS62LV1288BLL

TRUTH TABLE

Mode

Not Selected

(Power-down)

Output Disabled

Read

Write

CE1

CE2

I/O Operation

High-Z

OUT

Vcc Current

, I

ISSI

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

TERM

STG

Parameter

Terminal Voltage with Respect to GND

Vcc related to GND

Storage Temperature

Power Dissipation

Value

–0.3 to + 4.6

–65 to +125

1.0

Unit

°C

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

OPERATING RANGE

Range

Industrial

Ambient Temperature

–40°C to +85°C

Speed

-70 ns

3.0V

3.6V

DC ELECTRICAL CHARACTERISTICS

(Over Operating Range)

Symbol

Parameter

Output HIGH Voltage

Output LOW Voltage

Input HIGH Voltage

Input LOW Voltage

(1)

Input Leakage

Output Leakage

Test Conditions

= Min., I

= –1.0 mA

= Min., I

= 2.1 mA

Min.

2.2

—

2.2

–0.3

–1

Max.

—

0.4

+ 0.3

0.6

Unit

µA

GND

≤

GND

≤

OUT

≤

Notes:

1. V

= –1.5V for pulse width less than 30 ns and not 100% tested.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. A

08/05/02

IS62LV1288BLL

POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

Symbol Parameter

Test Conditions

Ind.

-70

Min. Max.

—

Unit

ISSI

Vcc Dynamic Operating V

= Max.,

= V

Supply Current

OUT

= 0 mA, f = f

MAX

TTL Standby Current

(TTL Inputs)

CMOS Standby

Current (CMOS Inputs)

= Max.,

= V

or V

CE1

≥

or CE2

≤

, f = 0

= Max., f = 0

Ind.

CE1

≥

– 0.2V,

typ

(2)

CE2

≤

0.2V,

or V

≥

– 0.2V, V

≤

0.2V

—

µA

Note:

1. At f = f

MAX

, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at Vcc = 3.3V, T

= 25

C and not 100% tested.

CAPACITANCE

(1,2)

Symbol

OUT

Parameter

Input Capacitance

Output Capacitance

Conditions

= 0V

OUT

= 0V

Max.

Unit

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: T

= 25°C, f = 1 MHz, Vcc = 3.0V.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. A

08/10/02

IS62LV1288BLL

READ CYCLE SWITCHING CHARACTERISTICS

(1)

(Over Operating Range)

-70

Symbol

Parameter

Read Cycle Time

Address Access Time

Output Hold Time

CE1

Access Time

CE2 Access Time

Access Time

to Low-Z Output

to High-Z Output

CE1

to Low-Z Output

CE2 to Low-Z Output

CE1

or CE2 to High-Z Output

Min.

—

Max.

—

Unit

ISSI

OHA

ACE

DOE

LZOE

(2)

HZOE

(2)

LZCE

(2)

LZCE

(2)

HZCE

(2)

Notes:

1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0.4V to 2.2V

and output loading specified in Figure 1.

2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

AC TEST CONDITIONS

Parameter

Input Pulse Level

Input Rise and Fall Times

Input and Output Timing

and Reference Level

Output Load

Unit

0.4V to 2.2V

5 ns

1.5V

See Figures 1 and 2

AC TEST LOADS

1213

Ω

3.0V

1213

Ω

3.0V

OUTPUT

100 pF

Including

jig and

scope

1378

Ω

OUTPUT

5 pF

Including

jig and

scope

1378

Ω

Figure 1.

Figure 2.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. A

08/05/02

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IS62LV1288BLL-70HI Related Products

	IS62LV1288BLL-70HI	IS62LV1288BLL-70QI	IS62LV1288BLL-70TI
Description	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, STSOP1-32	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, 0.450 INCH, PLASTIC, SOP-32	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, TSOP1-32
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
Parts packaging code	TSOP1	SOIC	TSOP1
package instruction	STSOP1-32	0.450 INCH, PLASTIC, SOP-32	TSOP1-32
Contacts	32	32	32
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum access time	70 ns	70 ns	70 ns
I/O type	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32
JESD-609 code	e0	e0	e0
length	11.8 mm	20.4285 mm	18.4 mm
memory density	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8
Number of functions	1	1	1
Number of terminals	32	32	32
word count	131072 words	131072 words	131072 words
character code	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C
organize	128KX8	128KX8	128KX8
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1	SOP	TSOP1
Encapsulate equivalent code	TSSOP32,.56,20	SOP32,.45	TSSOP32,.8,20
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	3 mm	1.2 mm
Maximum standby current	0.000015 A	0.000015 A	0.000015 A
Minimum standby current	2 V	2 V	2 V
Maximum slew rate	0.03 mA	0.03 mA	0.03 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES
technology	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING
Terminal pitch	0.5 mm	1.27 mm	0.5 mm
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	8 mm	11.303 mm	8 mm

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