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BSP130-T: DescriptionTRANSISTOR 0.3 A, 300 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size80KB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BSP130-T Overview

TRANSISTOR 0.3 A, 300 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

BSP130-T Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	300 V
Maximum drain current (ID)	0.3 A
Maximum drain-source on-resistance	8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	1.4 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

BSP130-T Preview

DISCRETE SEMICONDUCTORS

DATA SHEET

age

M3D087

BSP130

N-channel enhancement mode

vertical D-MOS transistor

Product speciﬁcation

Supersedes data of 1997 Jun 23

2001 Dec 11

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode

vertical D-MOS transistor

FEATURES

•

Direct interface to C-MOS, TTL, etc.

•

High-speed switching

•

No secondary breakdown.

APPLICATIONS

•

Line current interruptor in telephone sets

•

Relay, high-speed and line transformer drivers.

handbook, halfpage

BSP130

PINNING - SOT223

1

2

3

4

gate

drain

source

drain

DESCRIPTION

4

d

DESCRIPTION

N-channel enhancement mode vertical D-MOS transistor

in a SOT223 package.

1

Top view

Marking code

BSP130.

2

3

MAM054

g

s

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

SYMBOL

V

DS

I

D

P

tot

V

GSO

R

DSon

V

GSoff

PARAMETER

drain-source voltage (DC)

drain current (DC)

total power dissipation

gate-source voltage

drain-source on-state

resistance

gate-source cut-off voltage

T

amb

≤

25

°C

open drain

I

D

= 250 mA; V

GS

= 10 V

I

D

= 1 mA; V

DS

= V

GS

CONDITIONS

−

0.8

MIN.

MAX.

300

350

1.5

±20

6

2

V

mA

W

V

Ω

V

UNIT

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

V

DS

V

GSO

I

D

I

DM

P

tot

T

stg

T

j

Note

1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm

2

.

PARAMETER

drain-source voltage (DC)

gate-source voltage (DC)

drain current (DC)

peak drain current

total power dissipation

storage temperature

junction temperature

T

amb

≤

25

°C;

note 1

open drain

CONDITIONS

−

−55

−

MIN.

MAX.

300

±20

350

1.4

1.5

+150

150

V

mA

A

W

°C

UNIT

2001 Dec 11

2

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode

vertical D-MOS transistor

THERMAL CHARACTERISTICS

SYMBOL

R

th j-a

Note

PARAMETER

thermal resistance from junction to ambient; note 1

VALUE

83.3

BSP130

UNIT

K/W

1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm

2

.

STATIC CHARACTERISTICS

T

j

= 25

°C

unless otherwise speciﬁed.

SYMBOL

V

(BR)DSS

I

GSS

V

GSth

R

DSon

I

DSS



Y

fs



C

iss

C

oss

C

rss

t

on

t

off

PARAMETER

drain-source breakdown voltage

gate-source leakage current

gate-source threshold voltage

drain-source on-state resistance

drain-source leakage current

transfer admittance

input capacitance

output capacitance

feedback capacitance

CONDITIONS

I

D

= 10

µA;

V

GS

= 0

V

GS

=

±20

V; V

DS

= 0

I

D

= 1 mA; V

DS

= V

GS

I

D

= 20 mA; V

GS

= 2.4 V

I

D

= 250 mA; V

GS

= 10 V

V

DS

= 240 V; V

GS

= 0

I

D

= 250 mA; V

DS

= 25 V

V

DS

= 25 V; V

GS

= 0; f = 1 MHz

V

DS

= 25 V; V

GS

= 0; f = 1 MHz

V

DS

= 25 V; V

GS

= 0; f = 1 MHz

I

D

= 250 mA; V

DD

= 50 V;

V

GS

= 0 to 10 V

I

D

= 250 mA; V

DD

= 50 V;

V

GS

= 10 to 0 V

MIN.

300

−

0.8

−

200

−

TYP. MAX. UNIT

−

4.8

3.7

−

690

100

21

10

−

±100

2

10

6

100

−

120

30

15

V

nA

V

Ω

nA

mS

pF

Switching times (see Figs

2

and

3)

turn-on time

turn-off time

6

46

10

60

ns

2001 Dec 11

3

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode

vertical D-MOS transistor

BSP130

handbook, halfpage

VDD = 50 V

90 %

INPUT

10 %

90 %

10 V

0V

ID

50

Ω

MBB691

OUTPUT

10 %

ton

toff

MBB692

Fig.2 Switching times test circuit.

Fig.3 Input and output waveforms.

handbook, halfpage

2

MRC218

handbook, halfpage

250

MLD765

Ptot

(W)

1.5

C

(pF)

200

150

1

100

0.5

50

Coss

Crss

0

10

20

VDS (V)

30

Ciss

0

50

100

150

Tj (°C)

200

0

V

GS

= 0; f = 1 MHz; T

j

= 25

°C.

Fig.5

Fig.4 Power derating curve.

Capacitance as a function of drain-source

voltage; typical values.

2001 Dec 11

4

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode

vertical D-MOS transistor

BSP130

handbook, halfpage

1.2

MLD766

VGS = 10 V

5V

4V

3.5 V

3V

handbook, halfpage

1.2

MLD767

ID

(A)

0.8

ID

(A)

0.8

0.4

2.5 V

0.4

2V

0

4

8

VDS (V)

12

0

2

4

6

8

10

VGS (V)

T

j

= 25

°C.

V

DS

= 10 V; T

j

= 25

°C.

Fig.6 Typical output characteristics.

Fig.7 Typical transfer characteristics.

handbook, halfpage

30

MLD768

VGS = 2 V

2.5 V

3V

3.5 V

handbook, halfpage

20

MLD769

RDSon

(Ω)

20

RDSon

(Ω)

15

10

5

4V

5V

10 V

0

10

−1

1

ID (A)

10

0

2

4

6

8

10

VGS (V)

T

j

= 25

°C.

V

DS

= 100 mV; T

j

= 25

°C.

Fig.8

Drain-source on-state resistance as a

function of drain current; typical values.

Fig.9

Drain-source on-state resistance as a function

of gate-source voltage; typical values.

2001 Dec 11

5

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BSP130-T Related Products

	BSP130-T	BSP130/T3	BSP130T/R
Description	TRANSISTOR 0.3 A, 300 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	TRANSISTOR 0.3 A, 300 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN, FET General Purpose Power	TRANSISTOR Si, SMALL SIGNAL, FET, FET General Purpose Small Signal
Maker	NXP	NXP	NXP
Reach Compliance Code	unknown	unknown	unknown
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Maximum drain-source on-resistance	8 Ω	8 Ω	8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1
Number of terminals	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
package instruction	SMALL OUTLINE, R-PDSO-G4	SOT-223, 4 PIN	-
ECCN code	EAR99	EAR99	-
Minimum drain-source breakdown voltage	300 V	300 V	-
Maximum drain current (ID)	0.3 A	0.3 A	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum pulsed drain current (IDM)	1.4 A	1.4 A	-
Is it Rohs certified?	-	conform to	conform to
JESD-609 code	-	e3	e3
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	260
Terminal surface	-	TIN	Matte Tin (Sn)
Maximum time at peak reflow temperature	-	NOT SPECIFIED	40

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