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PMF370XN
N-channel TrenchMOS extremely low level FET
Rev. 03 — 20 June 2008
Product data sheet
1. Product profile
1.1 General description
Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Saves PCB space due to small footprint
(40 % smaller than SOT23)
Surface-mounted package
Low threshold voltage
Suitable for low gate drive sources
1.3 Applications
Driver circuits
Switching in portable appliances
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
R
DSon
Quick reference
Conditions
T
j
≥
25
°C;
T
j
≤
150
°C
T
sp
= 25
°C;
V
GS
= 4.5 V;
see
Figure 1
and
3
T
sp
= 25
°C;
see
Figure 2
V
GS
= 4.5 V; I
D
= 0.2 A;
T
j
= 25
°C;
see
Figure 9
and
10
Min
-
-
-
-
Typ
-
-
-
370
Max
30
0.87
0.56
440
Unit
V
A
W
mΩ
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Symbol Parameter
Static characteristics
NXP Semiconductors
PMF370XN
N-channel TrenchMOS extremely low level FET
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Symbol
G
S
D
Description
gate
source
drain
1
2
G
mbb076
Simplified outline
3
Graphic symbol
D
SOT323 (SC-70)
S
3. Ordering information
Table 3.
Ordering information
Package
Name
PMF370XN
SC-70
Description
plastic surface-mounted package; 3 leads
Version
SOT323
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
T
sp
= 25
°C
T
sp
= 25
°C;
t
p
≤
10
μs;
pulsed
T
sp
= 25
°C;
V
GS
= 4.5 V; see
Figure 1
and
3
T
sp
= 100
°C;
V
GS
= 4.5 V; see
Figure 1
T
sp
= 25
°C;
t
p
≤
10
μs;
pulsed; see
Figure 3
T
sp
= 25
°C;
see
Figure 2
Conditions
T
j
≥
25
°C;
T
j
≤
150
°C
T
j
≤
150
°C;
T
j
≥
25
°C;
R
GS
= 20 kΩ
Min
-
-
-12
-
-
-
-
-55
-55
-
-
Max
30
30
12
0.87
0.55
1.74
0.56
150
150
0.47
0.94
Unit
V
V
V
A
A
A
W
°C
°C
A
A
Source-drain diode
PMF370XN_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 20 June 2008
2 of 12
NXP Semiconductors
PMF370XN
N-channel TrenchMOS extremely low level FET
120
I
der
(%)
80
03aa25
120
P
der
(%)
80
03aa17
40
40
0
0
50
100
150
T
sp
(°C)
I
D
I
D
(25°C )
0
200
0
50
100
150
T
sp
(°C)
P
tot
P
tot
(25°C )
200
I
der
=
× 100 %
P
der
=
× 100 %
Fig 1. Normalized continuous drain current as a
function of solder point temperature
10
I
D
(A)
1
Fig 2. Normalized total power dissipation as a
function of solder point temperature
03an15
Limit R
DSon
= V
DS
/ I
D
t
p
= 10
μ
s
100
μ
s
1 ms
10
-1
DC
10 ms
100 ms
10
-2
10
-1
1
10
V
DS
(V)
10
2
T
s p
= 25°C;
I
DM
is single pulse;V
GS
= 4.5V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PMF370XN_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 20 June 2008
3 of 12
NXP Semiconductors
PMF370XN
N-channel TrenchMOS extremely low level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
Conditions
Min
-
Typ
-
Max
220
Unit
K/W
thermal resistance
see
Figure 4
from junction to solder
point
10
3
Z
th(j-sp)
(K/W)
10
2
δ
= 0.5
0.2
0.1
0.05
0.02
10
single pulse
03an27
P
δ
=
t
p
T
t
p
T
t
1
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
Conditions
I
D
= 1
μA;
V
GS
= 0 V; T
j
= -55
°C
I
D
= 1
μA;
V
GS
= 0 V; T
j
= 25
°C
Min
27
30
-
0.35
0.5
-
-
-
-
-
Typ
-
-
-
-
1
-
-
-
10
10
Max
-
-
1.8
-
1.5
1
2
10
100
100
Unit
V
V
V
V
V
μA
μA
μA
nA
nA
Static characteristics
gate-source threshold I
D
= 0.25 mA; V
DS
= V
GS
;
voltage
T
j
= -55
°C;
see
Figure 7
I
D
= 0.25 mA; V
DS
= V
GS
;
T
j
= 150
°C;
see
Figure 7
and
8
I
D
= 0.25 mA; V
DS
= V
GS
;
T
j
= 25
°C;
see
Figure 7
and
8
I
DSS
drain leakage current
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25
°C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 70
°C
V
DS
= 30 V; V
GS
= 0 V;
T
j
= 150
°C
I
GSS
gate leakage current
V
GS
= 12 V; V
DS
= 0 V; T
j
= 25
°C
V
GS
= -12 V; V
DS
= 0 V;
T
j
= 25
°C
PMF370XN_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 20 June 2008
4 of 12
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