Ordering number : EN6137B
5LN01M
SANYO Semiconductors
DATA SHEET
5LN01M
Features
•
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance
Ultrahigh-speed switching
2.5V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
Conditions
Ratings
50
±10
0.1
0.4
0.15
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
*
Machine Model
Package Dimensions
unit : mm (typ)
7023A-010
2.0
3
0.15
Product & Package Information
• Package
: MCP
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
5LN01M-TL-E
5LN01M-TL-H
0.425
Packing Type: TL
Marking
LOT No.
1.25
2.1
0 to 0.08
0.2
0.425
1
0.65
2
0.3
YB
TL
LOT No.
Electrical Connection
1 : Gate
2 : Source
3 : Drain
SANYO : MCP
1
3
0.9
0.3
2
http://semicon.sanyo.com/en/network
71112 TKIM/31506PE MSIM TB-00002111/31000 TS (KOTO) TA-2048 No.6137-1/7
5LN01M
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=100mA, VGS=0V
VDS=10V, VGS=10V, ID=100mA
See specified Test Circuit.
VDS=10V, f=1MHz
Conditions
ID=1mA, VGS=0V
VDS=50V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100μA
VDS=10V, ID=50mA
ID=50mA, VGS=4V
ID=30mA, VGS=2.5V
ID=10mA, VGS=1.5V
0.4
0.13
0.18
6
7.1
10
6.6
4.7
1.7
18
42
190
105
1.57
0.20
0.32
0.85
1.2
7.8
9.9
20
Ratings
min
50
1
±10
1.3
typ
max
Unit
V
μA
μA
V
S
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VDD=25V
VIN
ID=50mA
RL=500Ω
VOUT
4V
0V
VIN
PW=10μs
D.C.≤1%
D
G
5LN01M
P.G
50Ω
S
Ordering Information
Device
5LN01M-TL-E
5LN01M-TL-H
Package
MCP
MCP
Shipping
3,000pcs./reel
3,000pcs./reel
memo
Pb Free
Pb Free and Halogen Free
No.6137-2/7
5LN01M
0.10
0.09
0.08
ID -- VDS
3 .0
0.20
ID -- VGS
VDS=10V
3.5V
4.0V
V
Ta=-
-25
°
C
2.
0.16
Drain Current, ID -- A
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
0.2
0.4
0.6
0.8
1.0
IT00054
Drain Current, ID -- A
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0
0.5
1.0
1.5
75
°
C
6.0
VGS=1.5V
V
2.0
25
°
2.5
5V
V
2.0
0.18
C
3.0
IT00055
Drain-to-Source Voltage, VDS -- V
12
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
100
7
RDS(on) -- ID
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
VGS=4V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
11
10
9
8
7
6
5
4
3
2
0
1
2
3
4
5
6
7
8
9
10
5
3
2
50mA
ID=30mA
10
7
5
3
2
Ta=75°C
25°C
--25°C
1.0
0.01
2
3
5
7
0.1
2
3
5
Gate-to-Source Voltage, VGS -- V
100
7
IT00056
100
7
RDS(on) -- ID
Drain Current, ID -- A
7 1.0
IT00057
RDS(on) -- ID
VGS=2.5V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
VGS=1.5V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
5
3
2
5
3
2
Ta=75°C
10
7
5
3
2
10
7
5
3
2
Ta=75°C
25°C
25°C
--25°C
--25°C
1.0
0.01
2
3
5
7
0.1
2
3
5
Drain Current, ID -- A
14
1.0
IT00058
7
1.0
0.001
2
3
5
7
0.01
2
3
5
RDS(on) -- Ta
Drain Current, ID -- A
1.0
|
y
fs
|
-- ID
7 0.1
IT00059
12
Forward Transfer Admittance,
|
y
fs
|
-- S
7
5
3
2
VDS=10V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
10
8
A
0m
=3
ID
50
I D=
.5V
=2
S
, VG
4.
S=
, VG
0V
C
-25
°
Ta=-
75
°
C
0.1
7
5
3
2
0.01
0.01
25
°
C
6
mA
4
2
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
2
3
5
7
0.1
2
3
5
Ambient Temperature, Ta --
°C
IT00060
Drain Current, ID -- A
7 1.0
IT00061
No.6137-3/7
5LN01M
1.0
7
5
IS -- VSD
VGS=0V
Switching Time, SW Time -- ns
1000
7
5
3
2
SW Time -- ID
VDD=25V
VGS=4V
Source Current, IS -- A
3
2
td(off)
tf
75
°
C
25
°
C
--25
°
C
0.1
7
5
3
2
0.01
0.5
100
7
5
3
2
10
0.01
Ta
=
tr
td(on)
0.6
0.7
0.8
0.9
1.0
1.1
1.2
IT00062
2
3
5
7
Diode Forward Voltage, VSD -- V
100
7
5
Ciss, Coss, Crss -- VDS
f=1MHz
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
10
9
8
7
6
5
4
3
2
1
0.1
IT00063
VGS -- Qg
VDS=10V
ID=100mA
Ciss, Coss, Crss -- pF
3
2
10
7
5
3
2
Ciss
Coss
Crss
1.0
0
5
10
15
20
25
30
35
40
45
50
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Drain-to-Source Voltage, VDS -- V
0.20
IT00064
Total Gate Charge, Qg -- nC
IT00065
PD -- Ta
Allowable Power Dissipation, PD -- W
0.15
0.10
0.05
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT00066
No.6137-4/7
5LN01M
Embossed Taping Specification
5LN01M-TL-E, 5LN01M-TL-H
No.6137-5/7
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