AO3405 datasheet, PDF - EEWORLD Datasheet

AO3405: DescriptionP-Channel Enhancement Mode Field Effect Transistor; CategoryDiscrete semiconductor The transistor; File Size107KB，4 Pages; ManufacturerAlpha & Omega Semiconductor; Websitehttp://www.aosmd.com/about; Environmental Compliance

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AO3405 Overview

P-Channel Enhancement Mode Field Effect Transistor

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Alpha & Omega Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	2.6 A
Maximum drain-source on-resistance	0.13 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	30 pF
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	1.4 W
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

	AO3405	AO3405L
Description	P-Channel Enhancement Mode Field Effect Transistor	P-Channel Enhancement Mode Field Effect Transistor
Is it Rohs certified?	conform to	conform to
Maker	Alpha & Omega Semiconductor	Alpha & Omega Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli	compli
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V
Maximum drain current (ID)	2.6 A	2.6 A
Maximum drain-source on-resistance	0.13 Ω	0.13 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	30 pF	30 pF
JEDEC-95 code	TO-236	TO-236
JESD-30 code	R-PDSO-G3	R-PDSO-G3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	1.4 W	1.4 W
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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