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SMBG33ATR

Description
600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size197KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

SMBG33ATR Overview

600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC PACKAGE-2

SMBG33ATR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeDO-215AA
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum breakdown voltage40.6 V
Minimum breakdown voltage36.7 V
Breakdown voltage nominal value38.65 V
Maximum clamping voltage53.3 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-215AA
JESD-30 codeR-PDSO-G2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.38 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage33 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn90Pb10)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
SMBJ5.0 thru SMBJ170CA
and SMBG5.0 thru SMBG170CA
SCOTTSDALE DIVISION
SURFACE MOUNT 600 Watt
Transient Voltage Suppressor
DESCRIPTION
This SMBJ5.0-170A or SMBG5.0-170A series of surface mount 600 W
Transient Voltage Suppressors (TVSs) protects a variety of voltage-sensitive
components from destruction or degradation. It is available in J-bend design
(SMBJ) with the DO-214AA package for greater PC board mounting density
or in a Gull-wing design (SMBG) in the DO-215AA for visible solder
connections. It is also available in both unidirectional and bidirectional
configurations with a C or CA suffix part number. Their response time is
virtually instantaneous. As a result, they can be used for protection from ESD
or EFT per IEC61000-4-2 and IEC61000-4-4, or for inductive switching
environments and induced RF protection. They can also protect from
secondary lightning effects per IEC61000-4-5 and class levels defined herein.
Microsemi also offers numerous other TVS products to meet higher and lower
power demands and special applications.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
NOTE: All SMB series are
equivalent to prior SMS package
identifications.
FEATURES
Economical surface mount design in both J-bend or
Gull-wing terminations
Available in both unidirectional and bidirectional
construction (add C or CA suffix for bidirectional)
Selections for 5.0 to 170 volts standoff voltages (V
WM
)
Suppresses transients up to 600 watts @ 10/1000 µs
(see Figure 1)
Fast response
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers.
Axial-lead equivalent packages for thru-hole mounting
available as P6KE6.8 to P6KE200CA (consult factory
for other surface mount options)
Moisture classification is Level 1 with no dry pack
required per IPC/JEDEC J-STD-020B
APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s, CMOS,
2
Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching transients & induced RF
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
Class 1: SMB 5.0 to SMB 120A or CA
Class 2: SMB 5.0 to SMB 60A or CA
Class 3: SMB 5.0 to SMB 30A or CA
Class 4: SMB 5.0 to SMB 15A or CA
Secondary lightning protection per IEC61000-4-5
with 12 Ohms source impedance:
Class 1: SMB 5.0 to SMB 36A or CA
Class 2: SMB 5.0 to SMB 18A or CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25
º
C: 600 watts at
10/1000
µs
(also see Fig 1,2, and 3).
Impulse repetition rate (duty factor): 0.01%
t
clamping
(0 volts to
V
(BR)
min.): < 100 ps theoretical for
unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65
º
C to +150
º
C
Thermal resistance: 25
º
C/W junction to lead, or 90
º
C/W
junction to ambient when mounted on FR4 PC board
(1oz Cu) with recommended footprint (see last page)
Steady-State Power dissipation: 5 watts at T
L
= 25
o
C,
or 1.38 watts at T
A
= 25
º
C when mounted on FR4 PC
board with recommended footprint
Forward Surge at 25ºC: 50 Amps peak impulse of 8.3
ms half-sine wave (unidirectional only)
Solder temperatures: 260
º
C for 10 s (maximum)
Copyright
2002
10-14-2003 REV C
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
TERMINALS: Gull-wing or C-bend (modified J-bend)
leads, tin-lead plated solderable per MIL-STD-750,
method 2026
POLARITY: Cathode indicated by band. No
marking on bi-directional devices
MARKING: Part number without prefix (e.g. 5.0,
5.0A, 5.0CA, 36, 36A, 36CA, etc.)
TAPE & REEL option: Standard per EIA-481-1-A
with 12 mm tape, 750 per 7 inch reel or 2500 per 13
inch reel (add “TR” suffix to part number)
WEIGHT: 0.1 grams
See package dimension on last page
SMB 5.0 – 170V
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

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