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2N6720LEADFREE

Description
Power Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, Plastic/Epoxy, 3 Pin, TO-237, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size31KB,1 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
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2N6720LEADFREE Overview

Power Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, Plastic/Epoxy, 3 Pin, TO-237, 3 PIN

2N6720LEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-237AA
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-237AA
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN (315)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
Base Number Matches1
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