EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

RN2112ACT

Description
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
CategoryDiscrete semiconductor    The transistor   
File Size149KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

RN2112ACT Overview

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN2112ACT Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionCHIP CARRIER, R-XBCC-N3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR
Shell connectionCOLLECTOR
Maximum collector current (IC)0.08 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)120
JESD-30 codeR-XBCC-N3
Number of components1
Number of terminals3
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON

RN2112ACT Related Products

RN2112ACT RN2113ACT
Description Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
Maker Toshiba Semiconductor Toshiba Semiconductor
package instruction CHIP CARRIER, R-XBCC-N3 CHIP CARRIER, R-XBCC-N3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 0.08 A 0.08 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 120 120
JESD-30 code R-XBCC-N3 R-XBCC-N3
Number of components 1 1
Number of terminals 3 3
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号