|
RN2112ACT |
RN2113ACT |
Description |
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications |
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications |
Maker |
Toshiba Semiconductor |
Toshiba Semiconductor |
package instruction |
CHIP CARRIER, R-XBCC-N3 |
CHIP CARRIER, R-XBCC-N3 |
Contacts |
3 |
3 |
Reach Compliance Code |
unknow |
unknow |
ECCN code |
EAR99 |
EAR99 |
Other features |
BUILT-IN BIAS RESISTOR |
BUILT-IN BIAS RESISTOR |
Shell connection |
COLLECTOR |
COLLECTOR |
Maximum collector current (IC) |
0.08 A |
0.08 A |
Collector-emitter maximum voltage |
50 V |
50 V |
Configuration |
SINGLE WITH BUILT-IN RESISTOR |
SINGLE WITH BUILT-IN RESISTOR |
Minimum DC current gain (hFE) |
120 |
120 |
JESD-30 code |
R-XBCC-N3 |
R-XBCC-N3 |
Number of components |
1 |
1 |
Number of terminals |
3 |
3 |
Package body material |
UNSPECIFIED |
UNSPECIFIED |
Package shape |
RECTANGULAR |
RECTANGULAR |
Package form |
CHIP CARRIER |
CHIP CARRIER |
Polarity/channel type |
PNP |
PNP |
Certification status |
Not Qualified |
Not Qualified |
surface mount |
YES |
YES |
Terminal form |
NO LEAD |
NO LEAD |
Terminal location |
BOTTOM |
BOTTOM |
transistor applications |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |