HIS040 datasheet, PDF - EEWORLD Datasheet

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HIS040: DescriptionSilicon Controlled Rectifier, 40A I(T)RMS, 40000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element, TO-218; CategoryAnalog mixed-signal IC Trigger device; File Size42KB，1 Pages; ManufacturerHutson Industries

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HIS040 Overview

Silicon Controlled Rectifier, 40A I(T)RMS, 40000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element, TO-218

HIS040 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Hutson Industries
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	200 V/us
Maximum DC gate trigger current	40 mA
Maximum DC gate trigger voltage	2 V
Maximum holding current	100 mA
JEDEC-95 code	TO-218
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Maximum leakage current	0.5 mA
On-state non-repetitive peak current	400 A
Number of components	1
Number of terminals	3
Maximum on-state current	40000 A
Maximum operating temperature	110 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	40 A
Maximum repetitive peak off-state leakage current	500 µA
Off-state repetitive peak voltage	50 V
Repeated peak reverse voltage	50 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

HIS040 Preview

MAXIMUM RATINGS

Repetitive Peak Off-State Voltage (1)

Gate open, and Tj = 110° C

RMS On-State Current at TC = 80 ° C

and Conduction Angle of 360°

Peak Surge (Non-Repetitive) On-State

Current, One-Cycle, at 50Hz or 60 Hz

Peak Gate-Trigger Current for 3µsec. Max.

Peak Gate-Power Dissipation at IGT < IGTM

Average Gate-Power Dissipation

Storage Temperature Range

Operating Temperature Range, Tj

SYMBOL VDRM

50

100

200

400

600

DEVICE NUMBERS

HIS025

HIS125

HIS225

HIS425

HIS625

25

250

5

20

0.5

HIS040

HIS140

HIS240

HIS440

HIS640

40

400

5

20

0.5

-40 to +150

-40 to +110

HIS065

HIS165

HIS265

HIS465

HIS665

65

650

5

20

0.5

UNITS

VDRM

VOLT

It(RMS)

ITSM

IGTM

PGM

PG(AV)

Tstg

Toper

AMP

WATT

°C

ELECTRICAL CHARACTERISTICS

At Specified Case Temperatures

Peak Off-State Current, Gate Open

TC = 110° C VDRM &VRRM = Max. Rating

Maximum On-State Voltage, (PEAK) at

TC=25°C, and IT = Rated Amps

DC Holding Current, Gate Open

and TC = 25°C

Critical Rate-Of-Rise of Off-State Voltage,

Gate Open, TC = 110°C

DC Gate – Trigger Current for Anode Voltage

= 12VDC, RL = 60

Ω

and at TC = 25° C

DC Gate-Trigger Voltage for Anode Voltage =

12VDC, RL = 60

Ω

and at TC = 25°C

Gate-Controlled Turn-on Time for

t D + t R, IGT = 150mA and TC = 25°C

Thermal Resistance, Junction-to-Case

IDRM

VTM

IHO

Critical

dv/dt

IGT

VGT

Tgt

R

θ

J-C

0.5

1.6

100

200

40

2

2.5

1.1

0.5

1.8

100

200

40

2

2.5

0.95

0.5

1.8

100

200

50

2

2.5

1.0

mA

MAX.

VOLT

MAX

mA

MAX.

V/µsec.

mA

MAX.

VOLT

MAX

µsec.

°C/WATT

TYP

*All Hutson Isolated TO-218 devices are UL Recognized.

UL number E95589 (N)

Note: Add “E” Suffix for Eyelet Leads

SOLID STATE CONTROL DEVICES

39

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