Silicon Controlled Rectifier, 330000mA I(T), 1000V V(DRM)
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Vishay |
package instruction | , |
Reach Compliance Code | unknown |
Nominal circuit commutation break time | 30 µs |
Critical rise rate of minimum off-state voltage | 15 V/us |
Maximum DC gate trigger current | 200 mA |
Maximum DC gate trigger voltage | 3 V |
Maximum holding current | 600 mA |
Maximum leakage current | 40 mA |
On-state non-repetitive peak current | 4900 A |
Maximum on-state voltage | 2.07 V |
Maximum on-state current | 330000 A |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -40 °C |
Off-state repetitive peak voltage | 1000 V |
Trigger device type | SCR |