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ECG465

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size91KB,1 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

ECG465 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

ECG465 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)0.003 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.3 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

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Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Transistor, Transistor, Transistor, Transistor, Transistor, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
FET technology METAL-OXIDE SEMICONDUCTOR JUNCTION JUNCTION JUNCTION JUNCTION METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL P-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.3 W 0.36 W 0.36 W 0.36 W 0.31 W 0.3 W 0.83 W 0.83 W 0.6 W
surface mount NO NO NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Configuration Single - - - - Single Single Single Single
Maximum drain current (Abs) (ID) 0.003 A - - - - 0.003 A 0.5 A 0.28 A 0.25 A
Operating mode ENHANCEMENT MODE - - - - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
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