R1LV0408CSB-7LI datasheet, PDF

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R1LV0408CSB-7LI: Description512K X 8 STANDARD SRAM, 70 ns, PDSO32; Categorystorage; File Size86KB，14 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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R1LV0408CSB-7LI Overview

512K X 8 STANDARD SRAM, 70 ns, PDSO32

R1LV0408CSB-7LI Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	32
Maximum operating temperature	85 Cel
Minimum operating temperature	-40 Cel
Maximum supply/operating voltage	3.6 V
Minimum supply/operating voltage	2.7 V
Rated supply voltage	3 V
maximum access time	70 ns
Processing package description	0.400 INCH, PLASTIC, TSOP2-32
state	ACTIVE
Craftsmanship	CMOS
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
Temperature level	INDUSTRIAL
memory width	8
organize	512K X 8
storage density	4.19E6 deg
operating mode	ASYNCHRONOUS
Number of digits	524288 words
Number of digits	512K
Memory IC type	STANDARD SRAM
serial parallel	PARALLEL

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R1LV0408C-I Series

Wide Temperature Range Version

4M SRAM (512-kword

8-bit)

REJ03C0098-0200Z

Rev. 2.00

May.25.2004

Description

The R1LV0408C-I is a 4-Mbit static RAM organized 512-kword

8-bit. R1LV0408C-I Series has

realized higher density, higher performance and low power consumption by employing CMOS process

technology (6-transistor memory cell). The R1LV0408C-I Series offers low power standby power

dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin

TSOP II and 32-pin STSOP.

Features

•

Single 3 V supply: 2.7 V to 3.6 V

•

Access time: 55/70 ns (max)

•

Power dissipation:



Active: 6 mW/MHz (typ)



Standby: 1.5

µW

(typ)

•

Completely static memory.



No clock or timing strobe required

•

Equal access and cycle times

•

Common data input and output.



Three state output

•

Directly TTL compatible.



All inputs and outputs

•

Battery backup operation.

•

Operating temperature:

−40

to +85°C

Rev.2.00, May.25.2004, page 1 of 12

R1LV0408CSB-7LI Related Products

	R1LV0408CSB-7LI	R1LV0408CSA-5SI	R1LV0408CSA-7LI	R1LV0408CSB-5SI	R1LV0408CSP-5SI	R1LV0408CSP-7LI	REJ03C0098_R1LV0408C
Description	512K X 8 STANDARD SRAM, 70 ns, PDSO32	512K X 8 STANDARD SRAM, 70 ns, PDSO32	512K X 8 STANDARD SRAM, 70 ns, PDSO32	512K X 8 STANDARD SRAM, 70 ns, PDSO32	512K X 8 STANDARD SRAM, 70 ns, PDSO32	512K X 8 STANDARD SRAM, 70 ns, PDSO32	512K X 8 STANDARD SRAM, 70 ns, PDSO32
Number of functions	1	1	1	1	1	1	1
Number of terminals	32	32	32	32	32	32	32
Maximum operating temperature	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel
Minimum operating temperature	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel
Maximum supply/operating voltage	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply/operating voltage	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Rated supply voltage	3 V	3 V	3 V	3 V	3 V	3 V	3 V
maximum access time	70 ns	70 ns	70 ns	70 ns	70 ns	70 ns	70 ns
Processing package description	0.400 INCH, PLASTIC, TSOP2-32	0.400 INCH, PLASTIC, TSOP2-32	0.400 INCH, PLASTIC, TSOP2-32	0.400 INCH, PLASTIC, TSOP2-32	0.400 INCH, PLASTIC, TSOP2-32	0.400 INCH, PLASTIC, TSOP2-32	0.400 INCH, PLASTIC, TSOP2-32
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
Craftsmanship	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
memory width	8	8	8	8	8	8	8
organize	512K X 8	512K X 8	512K X 8	512K X 8	512K X 8	512K X 8	512K X 8
storage density	4.19E6 deg	4.19E6 deg	4.19E6 deg	4.19E6 deg	4.19E6 deg	4.19E6 deg	4.19E6 deg
operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Memory IC type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
serial parallel	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Number of digits	512K	512K	512K	512K	512K	512K	512K

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