GSRU20035 datasheet, PDF - EEWORLD Datasheet

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GSRU20035: DescriptionPower Bipolar Transistor, 25A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin; CategoryDiscrete semiconductor The transistor; File Size53KB，1 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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Power Bipolar Transistor, 25A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

GSRU20035 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Vishay
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	25 A
Collector-based maximum capacity	500 pF
Collector-emitter maximum voltage	350 V
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	8
JEDEC-95 code	TO-204AA
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	200 W
Maximum power dissipation(Abs)	200 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	20 MHz
Maximum off time (toff)	2700 ns
Maximum opening time (tons)	570 ns
VCEsat-Max	1.5 V

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GSRU20035 Related Products

	GSRU20035	2N4002	GSDS50020	2N6032	2N4003	GSTU30018	GSRU20030	GSRU20040	GSDS50018
Description	Power Bipolar Transistor, 25A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin	Power Bipolar Transistor, 30A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin	Power Bipolar Transistor, 50A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin	Transistor	Power Bipolar Transistor, 30A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin	Power Bipolar Transistor, 30A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin	Power Bipolar Transistor, 25A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin	Power Bipolar Transistor, 25A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin	Power Bipolar Transistor, 50A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
package instruction	FLANGE MOUNT, O-MBFM-P2	POST/STUD MOUNT, O-MUPM-D3	FLANGE MOUNT, O-MBFM-P2	,	POST/STUD MOUNT, O-MUPM-D3	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown	unknow	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	25 A	30 A	50 A	50 A	30 A	30 A	25 A	25 A	50 A
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE	Single	SINGLE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE
Minimum DC current gain (hFE)	8	10	8	10	10	10	8	8	8
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	200 W	100 W	100 W	80 W	100 W	175 W	200 W	200 W	100 W
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Nominal transition frequency (fT)	20 MHz	15 MHz	30 MHz	50 MHz	15 MHz	20 MHz	20 MHz	20 MHz	30 MHz
Is it Rohs certified?	incompatible	-	incompatible	incompatible	-	incompatible	incompatible	incompatible	incompatible
Maker	Vishay	-	Vishay	Vishay	Vishay	-	Vishay	Vishay	Vishay
Shell connection	COLLECTOR	-	COLLECTOR	-	-	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Collector-based maximum capacity	500 pF	-	350 pF	-	-	350 pF	500 pF	500 pF	350 pF
Collector-emitter maximum voltage	350 V	80 V	200 V	-	100 V	180 V	300 V	400 V	180 V
JEDEC-95 code	TO-204AA	TO-63	TO-204AE	-	TO-63	TO-204AA	TO-204AA	TO-204AA	TO-204AE
JESD-30 code	O-MBFM-P2	O-MUPM-D3	O-MBFM-P2	-	O-MUPM-D3	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e0	-	e0	e0	-	e0	e0	e0	e0
Number of components	1	1	1	-	1	1	1	1	1
Number of terminals	2	3	2	-	3	2	2	2	2
Package body material	METAL	METAL	METAL	-	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	-	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	POST/STUD MOUNT	FLANGE MOUNT	-	POST/STUD MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum power consumption environment	200 W	100 W	100 W	-	100 W	175 W	200 W	200 W	100 W
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG	SOLDER LUG	PIN/PEG	-	SOLDER LUG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	UPPER	BOTTOM	-	UPPER	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	2700 ns	3000 ns	925 ns	-	3000 ns	1700 ns	2700 ns	2700 ns	925 ns
Maximum opening time (tons)	570 ns	1000 ns	240 ns	-	1000 ns	650 ns	570 ns	570 ns	240 ns
VCEsat-Max	1.5 V	1.2 V	1 V	-	1.2 V	1 V	1.5 V	1.5 V	1 V
ECCN code	-	EAR99	EAR99	-	EAR99	EAR99	EAR99	-	EAR99
Base Number Matches	-	1	1	1	1	1	-	-	-

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