MBM29QM12DH70PCN datasheet, PDF

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MBM29QM12DH70PCN: DescriptionFlash, 8MX16, 70ns, PDSO56,; Categorystorage storage; File Size1MB，78 Pages; ManufacturerSPANSION; Websitehttp://www.spansion.com/

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MBM29QM12DH70PCN Overview

Flash, 8MX16, 70ns, PDSO56,

MBM29QM12DH70PCN Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SPANSION
package instruction	TSSOP, TSSOP56,.8,20
Reach Compliance Code	unknown
Maximum access time	70 ns
startup block	BOTTOM/TOP
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PDSO-G56
memory density	134217728 bit
Memory IC Type	FLASH
memory width	16
Number of departments/size	16,254
Number of terminals	56
word count	8388608 words
character code	8000000
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	8MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP56,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
page size	8 words
Parallel/Serial	PARALLEL
power supply	1.8,3/3.3 V
Certification status	Not Qualified
ready/busy	YES
Department size	4K,32K
Maximum standby current	0.000005 A
Maximum slew rate	0.06 mA
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
switch bit	YES
type	NOR TYPE

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SPANSION Flash Memory

Data Sheet

September 2003

This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and

Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

these products will be offered to customers of both AMD and Fujitsu.

Continuity of Specifications

There is no change to this datasheet as a result of offering the device as a SPANSION

revisions will occur when appropriate, and changes will be noted in a revision summary.

product. Future routine

Continuity of Ordering Part Numbers

AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these

products, please use only the Ordering Part Numbers listed in this document.

For More Information

Please contact your local AMD or Fujitsu sales office for additional information about SPANSION

solutions.

memory

MBM29QM12DH

-60

(Continued)

The device provides truly high performance non-volatile Flash memory solution. The device offers fast page

access times of 20 ns with random access times of 60 ns, allowing operation of high-speed microprocessors

without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE),

and output enable (OE) controls. The page size is 8 words.

The dual operation function provides simultaneous operation by dividing the memory space into four banks. The

device can improve overall system performance by allowing a host system to program or erase in one bank,

then immediately and simultaneously read from the other bank with zero latency. This releases the system from

waiting for the completion of program or erase operations.

The device is command set compatible with JEDEC standard E

PROMs. Commands are written to the command

machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and

data needed for the programming and erase operations. Reading data out of the device is similar to reading

from 5.0 V and 12.0 V Flash or EPROM devices.

The device is programmed by executing the program command sequence. This will invoke the Embedded

Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies

proper cell margins. Typically, each 32K words sector can be programmed and verified in about 0.3 seconds.

Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase

Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed

before executing the erase operation. During erase, the device automatically times the erase pulse widths and

verifies proper cell margins.

Any individual sector is typically erased and verified in 0.5 second. (If already preprogrammed.)

The device also features a sector erase architecture. The sector mode allows each sector to be erased and

reprogrammed without affecting other sectors. The device is erased when shipped from the factory.

The device features single 3.0 V power supply operation for both read and write functions. Internally generated

and regulated voltages are provided for the program and erase operations. A low V

detector automatically

inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ

by the Toggle Bit feature on DQ

, output pin. Once the end of a program or erase cycle has been completed,

the device internally resets to the read mode.

Fujitsu’s Flash technology combines years of Flash memory manufacturing experience to produce the highest

levels of quality, reliability, and cost effectiveness. The device memory electrically erases all bits within a sector

simultaneously via Fowler-Nordhiem tunneling. The words are programmed one word at a time using the EPROM

programming mechanism of hot electron injection.

MBM29QM12DH70PCN Related Products

	MBM29QM12DH70PCN
Description	Flash, 8MX16, 70ns, PDSO56,
Is it Rohs certified?	incompatible
Maker	SPANSION
package instruction	TSSOP, TSSOP56,.8,20
Reach Compliance Code	unknown
Maximum access time	70 ns
startup block	BOTTOM/TOP
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PDSO-G56
memory density	134217728 bit
Memory IC Type	FLASH
memory width	16
Number of departments/size	16,254
Number of terminals	56
word count	8388608 words
character code	8000000
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	8MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP56,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
page size	8 words
Parallel/Serial	PARALLEL
power supply	1.8,3/3.3 V
Certification status	Not Qualified
ready/busy	YES
Department size	4K,32K
Maximum standby current	0.000005 A
Maximum slew rate	0.06 mA
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
switch bit	YES
type	NOR TYPE

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