FM120-M
DTC143ZCA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
Pb-Free package is available
•
Guardring for overvoltage protection.
RoHS product
high-speed switching.
•
Ultra
for packing code suffix ”G”
•
free product for packing
metal silicon junction.
Halogen
Silicon epitaxial planar chip,
code suffix “H”
•
Planar Die Construction
Epitaxial
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Complementary NPN Types Available
RoHS product for packing code suffix "G"
Built-In
•
Biasing Resistors
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
.063(1.60)
.047(1.20)
•
Features
0.146(3.7)
0.130(3.3)
SOT-23
0.012(0.3) Typ.
.122(3.10)
.106(2.70)
0.071(1.8)
0.056(1.4)
•
•
Absolute maximum ratings
2026
Method
@ 25
Symbol
I
C
V
IN
P
d
T
j
T
stg
Parameter
•
Polarity : Indicated by cathode band
Min
Collector current
---
•
Mounting Position : Any
Input voltage
-5
Power dissipation
---
•
Weight : Approximated 0.011 gram
Junction temperature
Storage temperature
MAXIMUM
RATINGS
Electrical Characteristics @ 25
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.008(0.20)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
.003(0.08)
Symbol
Parameter
Min
Typ
Max
Unit
Marking Code
voltage (V
CC
=5V, I
O
=100 A)
0.5
12
---
13
V
14
15
16
18
10
115
120
---
V
I(off)
Input
---
V
RRM
---
V
I(on)
20
1.3
30
V
40
50
60
80
100
150
200
(V
O
=0.3V, I =5mA)
Maximum Recurrent Peak Reverse
O
Voltage
V
O(on)
Output voltage (I
O
=5mA,I
i
=0.25mA)
---
---
0.3
V
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
V
RMS
.004(0.10)MAX.
I
I
Input current (V
I
=5V)
---
---
1.8
mA
Maximum DC Blocking Voltage
20
0.5
30
A
40
50
60
80
100
150
200
I
O(off)
Output current (V
CC
=50V, V
I
=0)
---
V
DC
---
G
I
DC current gain (V
O
=5V, I
O
Current
80
I
O
---
---
Maximum Average Forward Rectified
=10mA)
1.0
R
1
Input resistance
3.29
4.7
6.11
K
.020(0.50)
R
2
Peak Forward Surge Current 8.3 ms single half sine-wave
8
I
FSM
10
/R
1
Resistance ratio
12
30
.012(0.30)
Transition frequency
---
250
---
MHz
f
superimposed on rated load (JEDEC method)
T
(V
O
=10V, I
O
=5mA, f=100MHz)
40
Typical Thermal Resistance (Note 2)
R
ΘJA
Dimensions in inches and (millimeters)
120
Typical Junction Capacitance (Note 1)
C
J
.083(2.10)
.110(2.80)
Typ
Max
Unit
Dimensions in inches and (millimeters)
100
---
mA
---
+30
V
200
---
mW
---
150
---
-55
---
150
AND ELECTRICAL CHARACTERISTICS
.006(0.15)MIN.
Epoxy meets UL 94 V-0 flammability rating
Mechanical data
Moisure Sensitivity Level 1
•
Epoxy
Marking: E23
: UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
.080(2.04)
.070(1.78)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Operating Temperature Range
Storage Temperature Range
T
J
TSTG
-55 to +125
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Suggested Solder
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Pad Layout
V
F
I
R
.035
.900
.055(1.40)
.035(0.89)
0.50
0.70
.031
.800
0.85
0.9
0.92
0.5
10
.079
2.000
inches
mm
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.037
.950
.037
.950
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
FM120-M
DTC143ZCA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
design, excellent
•
Batch process
ON Characteristics
power dissipation offers
WILLAS
PACKAGE
OFF Characteristics
SOD-123H
Pb Free Produc
Features
Package outline
Typical Characteristics
10
100
30
V
I(ON)
10
OUTPUT CURRENT
3
1
better reverse leakage current and thermal resistance.
=0.3
O
•
Low profile surface mounted application in
V
order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
T
a
=25
℃
RoHS product for packing code suffix "G"
•
T
a
=100
℃
Halogen free product for packing code suffix "H"
V
CC
=5V
3
1
0.146(3.7)
0.130(3.3)
(V)
0.012(0.3) Typ.
(mA)
I
O
0.3
INPUT VOLTAGE
T
a
=100
℃
0.1
T
a
=25
℃
0.071(1.8)
0.056(1.4)
0.03
0.01
0.3
Mechanical data
3E-3
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
0.1
•
Case : Molded plastic, SOD-123H
0.3
3
0.1
1
10
100
30
,
•
Terminals :Plated
CURRENT I
solderable per MIL-STD-750
OUTPUT
terminals,
(mA)
O
1E-3
0.2
0.031(0.8) Typ.
0.4
0.6
0.8
0.031(0.8) Typ.
1.0
INPUT VOLTAGE
V
I(OFF)
(V)
Method 2026
1000
•
Polarity : Indicated by cathode band
G
I
Any
•
Mounting Position :
—— I
O
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
1000
V
O(ON)
——
I
O
I
O
/I
I
=20
V
O
=5V
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(mV)
OUTPUT VOLTAGE
V
O(ON)
300
DC CURRENT GAIN
Ratings at 25℃ ambient
T
a
=100
℃
temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
100
T
a
=25
℃
For capacitive load, derate current by 20%
30
G
I
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
100
Marking Code
Maximum Recurrent Peak Reverse Voltage
10
V
RRM
V
RMS
V
DC
I
O
10
30
12
20
14
20
13
30
21
30
30
14
40
28
40
15
50
35
50
T
a
=100
℃
16
60
60
18
80
T
a
=25
℃
56
10
100
70
100
115
150
105
150
120
200
140
200
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
3
42
1.0
30
3
40
120
80
Peak Forward Surge Current 8.3 ms single half sine-wave
1
superimposed on rated load (JEDEC method)
0.1
0.3
1
3
I
FSM
R
ΘJA
C
J
T
J
TSTG
f=1MHz
T
a
=25
℃
10
30
100
100
10
0.1
0.3
1
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
C
O
OUTPUT CURRENT
I
O
(mA)
OUTPUT CURRENT
I
O
(mA)
Typical Junction Capacitance (Note 1)
-55 to +125
400
-55 to +150
(pF)
10
—— V
R
P
D
—— T
a
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
8
Maximum Average Reverse Current at @T A=25℃
C
O
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
350
V
F
@T A=125℃
0.50
(mW)
300
0.70
0.5
10
0.85
0.9
0.92
Rated DC Blocking Voltage
I
R
POWER DISSIPATION
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
4
OUTPUT CAPACITANCE
6
P
D
250
200
DTC143ZCA
150
100
2
50
0
0
4
8
12
16
20
0
0
25
50
75
100
a
125
150
2012-06
REVERSE BIAS VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T (
℃
WILLAS
)
ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
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