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31DF1

Description
1.6 A, 100 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size157KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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31DF1 Overview

1.6 A, 100 V, SILICON, RECTIFIER DIODE

31DF1-31DF2
Super Fast Rectifiers
VOLTAGE RANGE: 100 --- 200 V
CURRENT: 1.6 A
Features
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol and
similar solvents
DO - 27
Mechanical Data
Case:JEDEC DO--27,molded plastic
Polarity: Color band denotes cathode
Weight: 0.041ounces,1.15 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,50Hz,resistive or inductive load. For capacitive load,derate by 20%.
31DF1
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
31DF2
200
140
200
1.6
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
125.0
A
Maximum instantaneous forw ard voltage
@ I
F
=1.6A
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T =25
A
@T
A
=100
(Note1)
(Note2)
(Note3)
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.98
5.0
50.0
30
90
34
- 55 ----- + 150
- 55 ----- + 150
V
A
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
http://www.luguang.cn
mail:lge@luguang.cn
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