EEWORLDEEWORLDEEWORLD

Part Number

Search

SB320

Description
3 A, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size171KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Compare View All

SB320 Online Shopping

Suppliers Part Number Price MOQ In stock  
SB320 - - View Buy Now

SB320 Overview

3 A, SILICON, BRIDGE RECTIFIER DIODE

SB320-SB370
Schottky Barrier Rectifier
VOLTAGE RANGE: 20 ---
70 V
CURRENT: 3.0 A
Features
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
xxx
For use in low voltage,high frequency inverters free
x
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
DO - 27
Mechanical Data
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SB320 SB330
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
(see fig.1)
SB340 SB350 SB360 SB370 UNITS
40
28
40
3.0
50
35
50
60
42
60
70
49
70
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
30
21
30
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
80.0
A
Maximum instantaneous forw ard voltage
@ 3.0 A (Note 1)
Maximum reverse current
@T
A
=25
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
0.5
0.5
20.0
40
40
-55 --- +125
-55 --- +150
0.74
V
at rated DC blocking voltage @T
A
=100
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
10.0
mA
pF
/W
Operating junction temperature range
Storage temperature range
-55 --- +150
NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient
http://www.luguang.cn
mail:lge@luguang.cn

SB320 Related Products

SB320 SB330 SB340 SB350 SB360 SB370
Description 3 A, SILICON, BRIDGE RECTIFIER DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD POWER CONNECTOR 3 A, SILICON, BRIDGE RECTIFIER DIODE 3 A, 70 V, SILICON, RECTIFIER DIODE, DO-201AD

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号