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H02N65

Description
N-Channel Power Field Effect Transistor
File Size125KB,6 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
Download Datasheet View All

H02N65 Overview

N-Channel Power Field Effect Transistor

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200910
Issued Date : 2009.04.07
Revised Date :
Page No. : 1/6
H02N65 Series
N-Channel Power Field Effect Transistor
H02N65 Series Pin Assignment
Tab
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed
to withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
1
2
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
3-Lead Plastic
TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
1
2
3
D
G
S
Features
H02N65 Series
Symbol:
Robust High Voltage Termination
Avalanc he Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperature
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (T
C
=25
o
C)
H02N60E (TO-220AB)
P
D
H02N60F (TO-220FP)
Derate above 25°C
H02N60E (TO-220AB)
H02N60F (TO-220FP)
T
j
, T
stg
E
AS
T
L
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(V
DD
=100V, V
GS
=10V, I
L
=2A, L=10mH, R
G
=25Ω)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
0.22
0.18
-55 to 150
120
260
°C
mJ
°C
W/°C
44
23
W
Value
2
8
±30
Units
A
A
V
H02N60E, H02N60F
HSMC Product Specification
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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