Preliminary
K6F2016R4G Family
CMOS SRAM
2Mb(128K x 16 bit) Low Power SRAM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROP-
ERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT
GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-
lar applications where Product failure could result in loss of life or personal or physical harm, or any military
or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
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Revision 0.0
April 2005
Preliminary
K6F2016R4G Family
Document Title
CMOS SRAM
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0
Initial draft
Draft Date
April 25, 2005
Remark
Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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Revision 0.0
April 2005
Preliminary
K6F2016R4G Family
FEATURES
•
•
•
•
•
•
CMOS SRAM
GENERAL DESCRIPTION
The K6F2016R4G families are fabricated by SAMSUNG′s
advanced full CMOS process technology. The families support
industrial temperature range and 48 ball Chip Scale Package
for user flexibility of system design. The family also supports
low data retention voltage for battery back-up operation with
low data retention current.
128K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Process Technology: Full CMOS
Organization: 128K x16 bit
Power Supply Voltage: 1.65~1.95V
Low Data Retention Voltage: 1.0V(Min)
Three State Outputs
Package Type: 48-FBGA-6.00x7.00
PRODUCT FAMILY
Power Dissipation
Product Family
Operating Temperature
Vcc Range
Speed
Standby
(I
SB1
, Typ.)
0.5µA
2)
Operating
(I
CC1
, Max)
2mA
PKG Type
K6F2016R4G-F
Industrial(-40~85°C)
1.65~1.95V
70
1)
/85ns
48-FBGA-6.00x7.00
1. The parameter is measured with 30pF test load.
2. Typical values are measured at V
CC
=1.8V, T
A
=25°C and not 100% tested.
PIN DESCRIPTION
1
2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
A
LB
OE
A0
A1
A2
DNU
Vcc
Vss
B
I/O9
UB
A3
A4
CS
I/O1
Row
Addresses
C
I/O10
I/O11
A5
A6
I/O2
I/O3
Row
select
Memory
Cell
Array
D
Vss
I/O12
DNU
A7
I/O4
Vcc
E
Vcc
I/O13
DNU
A16
I/O5
Vss
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
F
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O
9
~I/O
16
G
I/O16
DNU
A12
A13
WE
I/O8
Column Addresses
H
DNU
A8
A9
A10
A11
DNU
48-FBGA: Top View (Ball Down)
Name
CS
OE
WE
A
0
~A
16
Function
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Name
Vcc
Vss
UB
LB
DNU
Function
Power
Ground
Upper Byte(I/O
9
~
16
)
Lower Byte(I/O
1
~
8
)
Do Not Use
CS
OE
WE
UB
LB
Control Logic
I/O
1
~I/O
16
Data Inputs/Outputs
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice
.
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Revision 0.0
April 2005
Preliminary
K6F2016R4G Family
PRODUCT LIST
Industrial Temperature Products(-40~85°C)
Part Name
K6F2016R4G-FF70
K6F2016R4G-XF70
K6F2016R4G-FF85
K6F2016R4G-XF85
1. LF : Lead Free Product
CMOS SRAM
Function
48-FBGA, 70ns, 1.8V
48-FBGA, 70ns, 1.8V, LF
1)
48-FBGA, 85ns, 1.8V
48-FBGA, 85ns, 1.8V, LF
1)
FUNCTIONAL DESCRIPTION
CS
H
X
1)
L
L
L
L
L
L
L
L
OE
X
1)
X
1)
H
H
L
L
L
X
1)
X
1)
X
1)
WE
X
1)
X
1)
H
H
H
H
H
L
L
L
LB
X
1)
H
L
X
1)
L
H
L
L
H
L
UB
X
1)
H
X
1)
L
H
L
L
H
L
L
I/O
1~8
High-Z
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
I/O
9~16
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
Mode
Deselected
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
Standby
Active
Active
Active
Active
Active
Active
Active
Active
1. X means don′t care. (Must be low or high state)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
V
IN
, V
OUT
V
CC
P
D
T
STG
T
A
Ratings
-0.2 to V
CC
+0.3V(Max. 2.6V)
-0.2 to 2.6
1.0
-65 to 150
-40 to 85
Unit
V
V
W
°C
°C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
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Revision 0.0
April 2005
Preliminary
K6F2016R4G Family
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Note:
1. Industrial Product: T
A
=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width
≤20ns.
3. Undershoot: -1.0V in case of pulse width
≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CMOS SRAM
Symbol
Vcc
Vss
V
IH
V
IL
Min
1.65
0
1.4
-0.2
3)
Typ
1.8
0
-
-
Max
1.95
0
Vcc+0.2
2)
0.4
Unit
V
V
V
V
CAPACITANCE
1)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Symbol
Test Conditions
V
IN
=Vss to Vcc
CS=V
IH
or OE=V
IH
or WE=V
IL
or LB=UB=V
IH
,
V
IO
=Vss to Vcc
Cycle time=1µs, 100%duty, I
IO
=0mA, CS≤0.2V,
LB≤0.2V or/and UB≤0.2V, V
IN
≤0.2V
or V
IN
≥V
CC
-0.2V
Cycle time=Min, I
IO
=0mA, 100% duty, CS=V
IL
,
LB=V
IL
or/and UB=V
IL
, V
IN
=V
IL
or V
IH
I
OL
= 0.1mA
I
OH
= -0.1mA
Other input =0~Vcc
1) CS≥Vcc-0.2V(CS controlled) or
2) LB=UB≥Vcc-0.2V, CS≤0.2V(LB/UB controlled)
85ns
70ns
Min
-1
-1
-
-
-
-
1.4
-
Typ
1)
-
-
-
-
-
-
-
0.5
Max
1
1
2
12
15
0.2
-
8
Unit
µA
µA
mA
mA
V
V
µA
I
LI
I
LO
I
CC1
Average operating current
I
CC2
Output low voltage
Output high voltage
Standby Current (CMOS)
V
OL
V
OH
I
SB1
1. Typical value are measured at V
CC
=1.8V, T
A
=25°C and not 100% tested.
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Revision 0.0
April 2005