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K8C5515EBM-FE1F0

Description
Flash, 16MX16, 100ns, PBGA167,
Categorystorage    storage   
File Size1MB,54 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K8C5515EBM-FE1F0 Overview

Flash, 16MX16, 100ns, PBGA167,

K8C5515EBM-FE1F0 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
package instructionFBGA, BGA167,12X15,32
Reach Compliance Codecompliant
Maximum access time100 ns
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B167
memory density268435456 bit
Memory IC TypeFLASH
memory width16
Humidity sensitivity level3
Number of departments/size4,255
Number of terminals167
word count16777216 words
character code16000000
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA167,12X15,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
Parallel/SerialPARALLEL
power supply1.8 V
Certification statusNot Qualified
ready/busyYES
Department size16K,64K
Maximum standby current0.00002 A
Maximum slew rate0.055 mA
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
switch bitYES
typeNOR TYPE

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